U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications

NIST Authors in Bold

Displaying 651 - 675 of 937

Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)

November 2, 2010
Author(s)
Jessica M. Torres, Nathan Bakken, Christopher Stafford, Jian Li, Bryan D. Vogt
The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular glasses

A Focused Chromium Ion Beam

October 21, 2010
Author(s)
Adam V. Steele, Brenton J. Knuffman, Jabez J. McClelland, Jon Orloff
With the goal of expanding the capabilities of focused ion beam microscopy and milling systems, we have demonstrated nanoscale focusing of chromium ions produced in a magneto-optical trap ion source (MOTIS). Neutral chromium atoms are captured into a

lSPR Study of DNA Wrapped Single Wall Carbon Nanotube (ssDNA-SWCNT) Adsorption on a Model Biological (Collagen) Substrate

September 20, 2010
Author(s)
Jung Jin Park, Jeffrey Fagan, JiYeon Huh, Kalman D. Migler, Alamgir Karim, Dharmaraj Raghavan
The kinetics of single stranded-DNA dispersed single wall carbon nanotubes (SWCNTs) adsorption onto an immobilized collagen layer in a microfluidic channel was probed using surface plasmon resonance (SPR) imaging. The adsorption was measured for a range of

The Cooper Pair Transistor

September 17, 2010
Author(s)
Jose A. Aumentado
The Cooper pair transistor (CPT) is a superconducting electrometer that has applications in quantum information as well as fundamental superconductivity studies. Since it operates in a near-dissipationless mode, it has potential as a minimally invasive

Stability and Surface Topography Evolution in Nanoimprinted Polymer Patterns under a Thermal Gradient

September 16, 2010
Author(s)
Christopher Soles, Yifu Ding, H. Jerry Qi, Kyle J. Alvine, Hyun W. Ro, Dae Up Ahn, Jack Douglas, Sheng Lin-Gibson
Nanostructures created in polymer films by nanoimprint lithography are subject to large stresses, both those from the imprinting processes as well as stresses arising from the intrinsic thermodynamic instabilities. These stresses can induce nanostructure

Growth of Planar Arrays of One-dimensional p-n Heterojunctions

September 15, 2010
Author(s)
Babak Nikoobakht, Andrew A. Herzing
We report a general method for /in-situ/ formation and hierarchical assembly of nanowire-based semiconductor heterojunctions that are electrically addressable. Heterojunctions are formed by lateral epitaxial growth of nanowires/nanowalls on a semiconductor

Carbon Nanotubes: Measuring Dispersion and Length

August 26, 2010
Author(s)
Jeffrey A. Fagan, Barry J. Bauer, Erik K. Hobbie, Matthew Becker, Angela R. Hight Walker, Jeffrey R. Simpson, Jae H. Chun, Jan Obrzut, Vardhan Bajpai, Frederick R. Phelan Jr., Daneesh O. Simien, JiYeon Huh, Kalman D. Migler
Advanced technological uses of single-wall carbon nanotubes (SWCNTs) rely on the production of single length and chirality populations that are currently only available through liquid phase post processing. The foundation of all of these processing steps

Production and Characterization of Polymer Microspheres Containing Trace Explosives Using Precision Particle Fabrication Technology

August 2, 2010
Author(s)
Matthew E. Staymates, Robert A. Fletcher, Jessica L. Staymates, John G. Gillen, Cory Berkland
Well characterized test materials are essential for validating the performance of current trace explosive detection systems. These test materials must replicate trace explosive contamination in the form of small particles with characteristic diameters in

Controlled nucleation of GaN nanowires grown with molecular beam epitaxy

July 13, 2010
Author(s)
Kristine A. Bertness, Aric W. Sanders, Devin M. Rourke, Todd E. Harvey, Alexana Roshko, Norman A. Sanford
The location of GaN nanowires was controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Growth was uniform within mask openings and absent on the mask surface for over 95 % of the usable area of a 76
Displaying 651 - 675 of 937
Was this page helpful?