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Displaying 526 - 550 of 756

Measurement of residual stress field anisotropy at indentations in silicon

June 23, 2010
Author(s)
Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific

Interlaboratory Comparison of Traceable Atomic Force Microscope Pitch Measurements

June 14, 2010
Author(s)
Ronald G. Dixson, Donald Chernoff, Shihua Wang, Theodore V. Vorburger, Ndubuisi G. Orji, Siew-Leng Tan, Joseph Fu
The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have undertaken a three-way interlaboratory

Gate Dielectrics Year-In-Review

May 3, 2010
Author(s)
Jason P. Campbell
The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The

NBTI: Confusion, Frustration, and Promise?

May 2, 2010
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been

Prediction of Collagen and Glycosaminoglycan Content by Acoustic Microscopy

April 21, 2010
Author(s)
Jenni R. Popp, Colm Flannery, Tammy L. Oreskovic, Jennifer Recknor, Kristi S. Anseth, Timothy P. Quinn
Functional tissue engineering of articular cartilage is rapidly advancing as a technique to develop regenerative and reparative treatments for cartilage degeneration and osteoarthritis. Tissue engineered constructs are often developed using a combination

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

April 18, 2010
Author(s)
J. J. Brown, A. I. Baca, Kristine A. Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures

Performance of Critical Flow Venturis under Transient Conditions

April 13, 2010
Author(s)
John D. Wright
Critical flow venturis (CFVs) can be used to measure flow under transient pressure and flow conditions with uncertainties of 0.13 % or less (95 % confidence level). Blow-down tests transferred 630 g of nitrogen during a 100 s interval from an unregulated

Probing Single Nanometer-Scale Pores with Polymeric Molecular Rulers

April 2, 2010
Author(s)
Sarah E. Henrickson, Edmund A. DiMarzio, Qian Wang, Vincent M. Stanford, John J. Kasianowicz
It has been shown that individual molecules of single stranded DNA can be driven electrophoretically through a single Staphylococcus aureus ?-hemolysin ion channel. Polynucleotides thread through the channel as extended chains and the polymer-induced ionic

Sub-50 nm measurements using a 193 nm angle-resolved scatterfield microscope

April 1, 2010
Author(s)
Richard Quintanilha, Martin Y. Sohn, Bryan M. Barnes, Richard M. Silver
Resist-on-silicon sub-50 nm targets have been investigated using a 193 nm angle-resolved scatter field microscope(ARSM). The illumination path of this microscope allows customization of the Conjugate Back Focal Plane (CBFP) while separate collection paths

Flip Chip Lamination Approach to Fabricate Top Metal Contacts on Organic-based Devices

March 15, 2010
Author(s)
Mariona Coll Bau, Oana Jurchescu, Nadine Gergel-Hackett, Curt Richter, Christina Hacker
Flip Chip Lamination approach to fabricate top metal contacts on organic-based devices ; M.Coll, O.D. Jurchescu, N. Gergel-Hackett, C.A. Richter, C,A, Hacker, American Physical Society (APS), March 2010, Portland, OR, USA (oral)

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

February 12, 2010
Author(s)
Norman A. Sanford, Paul T. Blanchard, Kristine A. Bertness, Lorelle Mansfield, John B. Schlager, Aric W. Sanders, Alexana Roshko, Beau Burton, Steven George
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficient for
Displaying 526 - 550 of 756
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