Gerbig, Y.
, Stranick, S.
and Cook, R.
(2010),
Measurement of residual stress field anisotropy at indentations in silicon, Scripta Materialia, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905445
(Accessed April 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Measurement of residual stress field anisotropy at indentations in silicon
Published
Author(s)
, ,
Abstract
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry, that can be related to the number and type of the active {111} slip systems for diamond cubic Si. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes.Citation
Scripta Materialia
Volume
63
Pub Type
Journals
Download Paper
Keywords
nanoindentation, Raman spectroscopy, silicon, residual stresses, crystallographic orientation
Citation
Created June 23, 2010, Updated February 19, 2017