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Measurement of residual stress field anisotropy at indentations in silicon



Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook


The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry, that can be related to the number and type of the active {111} slip systems for diamond cubic Si. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes.
Scripta Materialia


nanoindentation, Raman spectroscopy, silicon, residual stresses, crystallographic orientation


Gerbig, Y. , Stranick, S. and Cook, R. (2010), Measurement of residual stress field anisotropy at indentations in silicon, Scripta Materialia, [online], (Accessed June 13, 2024)


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Created June 23, 2010, Updated February 19, 2017