Gerbig, Y.
, Stranick, S.
and Cook, R.
(2010),
Measurement of residual stress field anisotropy at indentations in silicon, Scripta Materialia, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905445
(Accessed October 20, 2025)
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Measurement of residual stress field anisotropy at indentations in silicon
Published
Author(s)
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Abstract
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry, that can be related to the number and type of the active {111} slip systems for diamond cubic Si. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes.Citation
Scripta Materialia
Volume
63
Pub Type
Journals
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Keywords
nanoindentation, Raman spectroscopy, silicon, residual stresses, crystallographic orientation
Citation
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Created June 23, 2010, Updated February 19, 2017