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NIST Authors in Bold

Displaying 32001 - 32025 of 73929

Simultaneous Determination of Inorganic Mercury, Methylmercury, and Total Mercury Concentrations in Cryogenic Fresh-Frozen and Freeze-dried Biological Reference Materials

October 1, 2007
Author(s)
David Point, William C. Davis, J. I. Garcia Alonso, Mathilde Monperrus, Steven J. Christopher, O.F. X. Donard, Paul R. Becker, Stephen A. Wise
A double spike speciated isotope dilution (DS-SID) reaction model was developed to study and correct for the inadvertent transformations affecting methylmercury (MeHg), inorganic mercury (iHg) and total mercury (HgT) measurements in biological tissues

Validation of Novel Optical Imaging Modalities: The Pathologists' View

October 1, 2007
Author(s)
W Wells, Peter E. Barker, C Macaulay, M Novelli, Richard Levenson, J Crawford
Recent advances in optical imaging technology have the potential to improve the accuracy of disease detection and predict treatment response. The critical end-point for the success of any new imaging technology is clinical outcome. The following review

CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

September 30, 2007
Author(s)
Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William Gutherie, Byron J. Shulver, Andrew S. Bunting, J. T. Stevenson, Anthony Walton
Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 11 mm

Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements

September 30, 2007
Author(s)
Hao Xiong, Dawei Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, Curt A. Richter, Gennadi Bersuker, Choi Rino, John S. Suehle
The electrically active defects in High-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN), charge pumping (CP), and ultra fast Id-Vg methods. The volume trap profile in the stacks is obtained by modeling the drain

Evaluation of Thin Film Mechanical Properties by Means of Electrical Test Methods

September 30, 2007
Author(s)
Nicholas Barbosa, Robert Keller, David T. Read, Richard P. Vinci
The ability to measure the mechanical properties of thin films and small scale structures is essential in designing reliable components at the micro- and nano-scales. It is known that the mechanical properties of thin film materials deviate from relations

Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces

September 30, 2007
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Hao Xiong, John S. Suehle
Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectron

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin

NIST Microwave Scattering Parameter and Power Measurement Services

September 30, 2007
Author(s)
Ronald A. Ginley
This paper describes the microwave scattering parameter (s-parameter) and power measurement services available at NIST. This includes what is measured in each of the services, the techniques used for both calibration of the systems and subsequent

Obtaining Molecular Thermochemistry From Calculations

September 30, 2007
Author(s)
Karl K. Irikura
There are several computational approaches for predicting gas-phase, molecular thermochemistry. For common organic compounds, empirical methods are quick to compute and have been effectively parameterized. For uncommon compounds, the relative robustness of

Scanning Kelvin Force Microscopy For Characterizing Nanostructures in Atmosphere

September 30, 2007
Author(s)
Joseph Kopanski, Muhammad Afridi, Stoyan Jeliazkov, Weirong Jiang, Thomas R. Walker
The Electrostatic Force Microscope (EFM) and its variants are of interest for the measurement of potential distributions within nanostructures, and for work function measurements of gate metals for next generation CMOS. In phase mode, the EFM measures

The Characterization of Silicon-Based Molecular Devices

September 30, 2007
Author(s)
Nadine Gergel-Hackett, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Curt A. Richter
In order to realize molecular electronic (ME) technology, an intermediate integration with more traditional silicon-based technologies will likely be required. However, there has been little effort to develop the metrology needed to enable the fabrication

The Decontamination for Building Plumbing Systems - Analysis and Procedures

September 30, 2007
Author(s)
Stephen J. Treado
This report describes the results of measurements and analysis of methods to decontaminate building plumbing systems in the event of the accidental or intentional introduction of undesirable substances via the water supply system. The work described was
Displaying 32001 - 32025 of 73929
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