CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

Published

September 30, 2007

Author(s)

Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William Gutherie, Byron J. Shulver, Andrew S. Bunting, J. T. Stevenson, Anthony Walton

Abstract

Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 11 mm silicon test chip mounted in a 200 mm carrier wafer. The RM 8111 chips were fabricated using MEMS techniques, which assure the alignment of the sidewalls of the features to silicon (111) lattice planes, and were calibrated in an AFM-HRTEM metrology sequence. This paper reports results on providing SCCDRMs fabricated on 200 mm bulk wafers, which would eliminate the need for carrier wafers.

Proceedings Title

Frontiers of Characterization and Metrology for Nanoelectronics

Conference Dates

March 27-29, 2007

Conference Location

Gaithersburg, MD, USA

Pub Type

Conferences

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Keywords

Critical Dimension (CD), Linewidth, Metrology, Optical Critical Dimension (OCD), Scatterometry

Citation

Allen, R. , Dixson, R. , Cresswell, M. , Gutherie, W. , Shulver, B. , Bunting, A. , Stevenson, J. and Walton, A. (2007), CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications, Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32654 (Accessed October 22, 2025)