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Spin-polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions

Published

Author(s)

Wenyong Wang, Curt A. Richter

Abstract

. In this study, we fabricate molecular magnetic tunnel junctions and demonstrate that inelastic electron tunneling spectroscopy technique can be utilized to inspect such junctions to investigate the existence of desired molecular species in the device area. Tunneling magnetoresistance measurements have been carried out and spin-dependent tunneling transport has been observed. Bias-dependence of the tunneling resistance has also been detected. IETS measurements at different magnetic field suggested that the TMR bias-dependence was likely caused by the inelastic scattering due to the molecular vibrations.
Proceedings Title
Frontiers of Characterization and Metrology for Nanoelectronics
Conference Dates
March 27-29, 2007
Conference Location
Gaithersburg, MD, USA
Conference Title
2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Keywords

spin dependent transport, molecular self-assembly

Citation

Wang, W. and Richter, C. (2007), Spin-polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions, Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32589 (Accessed June 20, 2024)

Issues

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Created September 29, 2007, Updated October 12, 2021