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The Characterization of Silicon-Based Molecular Devices



Nadine E. Gergel-Hackett, Christina A. Hacker, Lee J. Richter, Oleg A. Kirillov, Curt A. Richter


In order to realize molecular electronic (ME) technology, an intermediate integration with more traditional silicon-based technologies will likely be required. However, there has been little effort to develop the metrology needed to enable the fabrication and characterization of CMOS-compatible ME devices. In this work, we used two different characterization techniques to evaluate the potential of more CMOS-compatible device materials. We first present the electrical characterization of a simple prototypical device structure fabricated on a silicon substrate with a (111) crystalline orientation. To compare these electrical results with the structure of the molecular monolayers (which is critical to confirm that the molecules are playing a role in charge transport), a novel backside incident FTIR technique was used to spectroscopically characterize the molecular monolayers under a full top-metallization. The combination of these characterization techniques showed that silver top contacts, unlike gold top contacts, do not penetrate and displace the molecular monolayer. We then fabricated and electrically characterized a prototypical molecular electronic device using the silicon orientation that is traditionally used for CMOS devices (Si (100)). Assembly on Si (100) can enable integrated ME-CMOS structures that allow on-chip characterization of molecular devices and is a major step on the route to hybrid molecular-CMOS circuitry
Proceedings Title
2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
Conference Dates
March 27-29, 2007
Conference Location
Gaithersburg, MD
Conference Title
Proceedings of the 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics


hybrid silicon/molecular devices, molecular electronics, self-assembled monolayer
Created September 30, 2007, Updated January 27, 2020