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NIST Authors in Bold

Displaying 31776 - 31800 of 73697

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

October 1, 2007
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to

Reference Material for Assessing Forensic SIM Tools

October 1, 2007
Author(s)
Wayne Jansen, Aurelien M. Delaitre
Subscriber Identity Modules (SIMs) are a fundamental standardized component of most cell phones used worldwide. A SIM can be removed from a phone handset and inserted into another, allowing users to port identity, personal information, and service between

Reproducibility of the Accommodation Coefficient of the Spinning Rotor Gauge

October 1, 2007
Author(s)
Ren F. Chang, Patrick J. Abbott
Eight spinning rotor gauges were calibrated numerous times simultaneously with the primary midrange vacuum standard at the National Institute of Standards and Technology, over a period of fifteen months to assess the reproducibility of their accommodation

Simultaneous Determination of Inorganic Mercury, Methylmercury, and Total Mercury Concentrations in Cryogenic Fresh-Frozen and Freeze-dried Biological Reference Materials

October 1, 2007
Author(s)
David Point, William C. Davis, J. I. Garcia Alonso, Mathilde Monperrus, Steven J. Christopher, O.F. X. Donard, Paul R. Becker, Stephen A. Wise
A double spike speciated isotope dilution (DS-SID) reaction model was developed to study and correct for the inadvertent transformations affecting methylmercury (MeHg), inorganic mercury (iHg) and total mercury (HgT) measurements in biological tissues

Validation of Novel Optical Imaging Modalities: The Pathologists' View

October 1, 2007
Author(s)
W Wells, Peter E. Barker, C Macaulay, M Novelli, Richard Levenson, J Crawford
Recent advances in optical imaging technology have the potential to improve the accuracy of disease detection and predict treatment response. The critical end-point for the success of any new imaging technology is clinical outcome. The following review

CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications

September 30, 2007
Author(s)
Richard A. Allen, Ronald G. Dixson, Michael W. Cresswell, William Gutherie, Byron J. Shulver, Andrew S. Bunting, J. T. Stevenson, Anthony Walton
Recently, prototype isolated-line, single-crystal CD reference materials (SCCDRMs) with linewidths as narrow as 40 nm ? 1.5 nm have been reported. These reference materials, designated NIST Reference Material (RM) 8111 were configured as a 10 mm by 11 mm

Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements

September 30, 2007
Author(s)
Hao Xiong, Dawei Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, Curt A. Richter, Gennadi Bersuker, Choi Rino, John S. Suehle
The electrically active defects in High-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN), charge pumping (CP), and ultra fast Id-Vg methods. The volume trap profile in the stacks is obtained by modeling the drain

Evaluation of Thin Film Mechanical Properties by Means of Electrical Test Methods

September 30, 2007
Author(s)
Nicholas Barbosa, Robert Keller, David T. Read, Richard P. Vinci
The ability to measure the mechanical properties of thin films and small scale structures is essential in designing reliable components at the micro- and nano-scales. It is known that the mechanical properties of thin film materials deviate from relations

Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces

September 30, 2007
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Hao Xiong, John S. Suehle
Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectron

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin
Displaying 31776 - 31800 of 73697
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