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Displaying 1 - 25 of 3084

Channeling-Induced Asymmetric Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass Spectrometry

May 1, 2000
Author(s)
G Ramanath, J E. Greene, I Petrov, J E. Baker, L H. Allen, J Greg Gillen
… and molecular secondary ions are observed during secondary ion mass spectrometry (SIMS) analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs+ ion beam. The sputter-etching … channeling, depth profile, secondary ion mass spectrometry … Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass …

Energies, Transition Rates, and Electron Dipole Moment Enhancement Factors for Ce IV and Pr V

October 12, 2021
Author(s)
I Savukov, W R. Johnson, U I. Safronova, M S. Safronova
… factors are calculated for low-lying states of Ce IV and Pr V using relativistic many-body perturbation theory. … to recent investigations of the more complicated Gd IV ion, which is promising for electron EDM experiments. The ions Ce IV and Pr V both have a single valence electron, permitting …

Muffin tin potentials in EXAFS analysis

September 1, 2015
Author(s)
Bruce D. Ravel
… Muffin tin potentials are the standard tool for calculating the … of atoms in the cluster and to calculate the muffin tin potentials are commonly also used to enumerate the … analysis. In this paper, it is shown that these muffin tin potentials are sufficiently robust to be used to examine …

The Potential of Highly Charged Ions: Possible Future Applications

September 1, 2007
Author(s)
John D. Gillaspy, Joshua M. Pomeroy, A C. Perrella, Holger Grube
… International Conference on the Physics of Highly Charged Ions. It briefly updates and extends an earlier review given … International Conference on the Physics Highly Charged Ions Proceedings … electron beam ion trap, euv lithography, highly charged ions, magnetic tunnel junctions, nanocrystals …

Effect of Tin Doping on alpha-Fe2O3 Photoanodes for Water Splitting

June 28, 2012
Author(s)
Christopher C. Bohn, Amit Agrawal, Erich C. Walter, Mark D. Vaudin, Andrew Herzing, Paul M. Haney, Albert A. Talin, Veronika Szalai
… varies as a function of distance from the fluorine-doped tin oxide (FTO) interface and was quantified using secondary … photoanode, hematite, tin doping, electrochemical impedance spectroscopy, dynamic … Effect of Tin Doping on alpha-Fe2O3 Photoanodes for Water Splitting …

Chapter 7: Quantitative Assessment of Stress Relaxation in Tin Films by the Formation of Whiskers, Hillocks, and Other Surface Defects

March 15, 2016
Author(s)
Nicholas Clore, Dennis D. Fritz, Wei-Hsun Chen, Maureen E. Williams, John E. Blendell, Carol A. Handwerker
… specific mechanisms responsible for stress relaxation & tin whisker formation in tin films. The current JEDEC standards [1,2] for the evaluation of tin whiskers is focused on identifying high aspect ratio … Mitigating Tin Whisker Risks: Theory and Practice …

TIN Techniques for Data Analysis and Surface Construction

January 1, 2004
Author(s)
Christoph J. Witzgall, Javier Bernal, Geraldine Cheok
… clouds by triangulated elevated surfaces referred to as TIN surfaces. It describes the general features of this approach, and refers to prototype TIN software employed at NIST for research into the analysis … data acquired by LADAR instrumentation. Inherent in the TIN approach is the establishment of neighbor relations …

Differential Surface Stress of a Tin Oxide Electrode

April 1, 2000
Author(s)
Gintaras Valincius, Vytautas Reipa
… provide experimental evidence for deviation of n-tin oxide electrode's properties from the electrocapillary … positive potentials, where the electrical properties of n-tin oxide electrode are consistent with the Mott-Schottky … electrochemistry, surface stress, tin oxide …

Tin Whisker Test Method Development

October 12, 2021
Author(s)
Valeska Schroeder, P Bush, Nick Vo, Maureen E. Williams
… electronics, any component suppliers plan to implement tin-based lead-free surfaces finishes to replace current … industry needed a test for assessing the susceptibilty of tin-based finishes to tin whisker formation and growth. The tin whisker test group … leadframe package, Pb-free, surface finish, tin whiskers, whisker growth …

Premixed Flame Inhibition by Manganese and Tin Compounds

April 1, 2001
Author(s)
Gregory T. Linteris, Vadim D. Knyazev, Valeri I. Babushok
… experimental measurements of influence of manganese- and tin-containing compounds (MMT, TMT0 on burning velocity of … with Fe(CO) 5 and CF 3 Br demonstrate that manganese and tin-containing agents are effective inhibitors. The … data. The decomposition of the parent molecule for the tin and manganese species is found to have a small effect on …

Inhibition of Premixed Methane Flames by Manganese and Tin Compounds

May 1, 2002
Author(s)
Gregory T. Linteris, Vadim D. Knyazev, Valeri I. Babushok
… experimental measurements of influence of manganese- and tin-containing compounds (MMT, TMT) on burning velocity of … with Fe(CO) 5 and CF 3 Br demonstrate that manganese and tin-containing compounds are effective inhibitors. The … describing the inhibition mechanisms of manganese- and tin-containing compounds are suggested. Simulations of MMT- …

Standard Reference Materials: Tin Freezing-Point Standard - SRM 741a

June 1, 1999
Author(s)
Gregory F. Strouse, N P. Moiseeva
… The freezing point of tin (231.928 degrees C) is a defining fixed point of the … cell containing high-purity ({> or =} 99.9999 % pure) tin. A 24 kg single lot of tin (99.999 97 % pure) constituting Standard Reference … Standard Reference Material, thermometric fixed point, tin freezing-point …

Laser-assisted atom probe tomography of Ti/TiN films deposited on Si

December 21, 2016
Author(s)
Norman A. Sanford, Paul T. Blanchard, Ryan M. White, Michael R. Vissers, Albert Davydov, D R. Diercks, David P. Pappas
… tomography (L-APT) was used to examine superconducting TiN/Ti/TiN trilayer films with nominal respective thicknesses of … separate batches were studied where the first (bottom) TiN layer was deposited at 500 ⁰C (for all batches) and the … atom probe tomography, electron energy loss spectroscopy, TiN, superconducting thin films …

Negative Ion-Neutral Reactions in Townsend Discharges

July 1, 1999
Author(s)
James K. Olthoff, MVVS. Rao
… Relative intensities and translational ion-flux energy distributions are presented for negative ions … 2 kTd). These results are discussed in light of relevant ion-molecule reactions where available. … CF 4 , ion molecule reactions, negative ions, O 2 , SF 6 , Townsend …

Internal tin Nb3Sn conductors engineered for fusion and particle accelerator applications

June 22, 2009
Author(s)
Jeffrey Parrell, Y. Zhang, Michael Field, M Meinesz, Yonghua Huang, H Miao, Seungok Hong, Najib Cheggour, Loren F. Goodrich
… years. For most magnet applications, high Jc internal tin has displaced bronze process strand. The highest Jc … such as ITER, we have developed single-barrier internal tin strands having non-Cu Jc values over 1100 A/mm2 (12 T, … Superconducting materials, Nb3Sn, Internal tin …

Reference correlations for the thermal conductivity of copper, gallium, indium, iron, lead, nickel and tin

November 12, 2017
Author(s)
Marc J. Assael, Arsenios Chatzimichailidis, K.D. Antoniadis, William A. Wakeham, Marcia L. Huber, Hiroyuki Fukuyama
… of liquid copper, gallium, indium, iron, lead, nickel and tin have been critically examined with the intention of … of liquid copper, gallium, indium, iron, lead, nickel and tin are respectively characterized by standard deviations of … lead, nickel, reference correlation, thermal conductivity, tin. …

Analysis of the Free Ion Nd 3+ Spectrum (Nd IV)

October 12, 2021
Author(s)
J-F Wyart, Ali Meftah, Wan-U Lydia Tchang-Brillet, Norbert Champion, O Lamrous, Nissan Spector, J Sugar
… Recent breakthrough in the analysis of Nd IV resulted in the establishment of 37 energy levels of the … emission spectrum, energy levels, free-ion, parametric fits, triply ionized, wavelengths … Analysis of the Free Ion Nd 3+ Spectrum (Nd IV) …

Dose Calibration of Ion Implanters for Semiconductor Production

February 1, 1998
Author(s)
F A. Stevie, David S. Simons, J M. McKinley, J McMacken, R Santiesteban, P Flatch, J Becerro
… a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using … Secondary Ion Mass Spectrometry SIMS XI … boron, ion implantation, silicon, SIMS … Dose Calibration of Ion Implanters for Semiconductor Production …

Tests of Theory in Rydberg States of One-electron Ions

July 1, 2014
Author(s)
Joseph N. Tan, Peter J. Mohr
… electrodynamics (QED) for Rydberg states of one-electron ions can test theory and allow new determinations of … of Standards and Technology (NIST), highly-charged ions (including bare nuclei)created in an Electron Beam Ion … trap. An ongoing experiment aims to produce one-electron ions isolated in an ion trap designed for laser spectroscopy. …

Infrared Spectra of Small Molecular Ions Trapped in Solid Neon

October 3, 2010
Author(s)
Marilyn E. Jacox
… Experiments in this laboratory trap molecular ions in dilute solid solution in neon at 4.2 K in sufficient … charge neutrality of the deposit. Recent observations of ions produced from C2H4 and BF3 will be discussed. Because of … Spectroscopy of Molecular Ions in the Laboratory and in Space …

Highly Charged Ion Studies at the NIST EBIT

January 1, 2001
Author(s)
L P. Ratliff, J R. Roberts
… Highly Charged Ion Studies at the NIST EBIT … atoms, EBIT, electron beam ion trap, highly charged ions, ions … Highly Charged Ion Studies at the NIST EBIT …

Trapping Highly Charged Ions: Fundamentals and Applications

April 1, 2000
Author(s)
John D. Gillaspy
… Fundamentals and applications for trapping highly charged ions. … Trapping Highly Charged Ions: Fundamentals and Applications … Trapping Highly Charged Ions: Fundamentals and Applications …
Displaying 1 - 25 of 3084
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