Channeling-Induced Asymmetric Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass Spectrometry

Published

May 1, 2000

Author(s)

G Ramanath, J E. Greene, I Petrov, J E. Baker, L H. Allen, J Greg Gillen

Abstract

Asymmetric depth profiles of elemental and molecular secondary ions are observed during secondary ion mass spectrometry (SIMS) analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs+ ion beam. The sputter-etching rate R and the secondary ion yield Y from TiN(002) layers are strongly dependent on the incidence angle of the primary ion beam. When the azimuthal angle between the incident beam and one of the in-plane <100> directions in TiN(001) is varied from 0 to 40 degrees, RTiN(001) and YTiN(001) vary by more than 40 % and by nearly a factor of three, respectively. In contrast, for polycrystalline TiN layers RpolyTiN and YpolyTiN are invariant with incident beam angle. Channeling of primary ions and secondary recoils through 0.106 nm wide channels between highly aligned (100) or (010) planes in TiN(001), and the lack of such alignment in the polycrystalline TiN are the major reasons for the observed differences.

Citation

Journal of Vacuum Science and Technology B

Volume

18

Issue

No. 3

Pub Type

Journals

Keywords

channeling, depth profile, secondary ion mass spectrometry

Citation

Ramanath, G. , Greene, J. , Petrov, I. , Baker, J. , Allen, L. and Gillen, J. (2000), Channeling-Induced Asymmetric Distortion of Depth Profiles from Polycrystalline-TiN/Ti/TiN(001) Trilayers During Secondary Ion Mass Spectrometry, Journal of Vacuum Science and Technology B (Accessed October 10, 2025)