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Nanotechnology

Nanometrology

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  • Published Date
Displaying 226 - 250 of 855

Local coexistence of VO2 phases revealed by deep data analysis

July 7, 2016
Author(s)
Evgheni Strelcov, Anton Ievlev, Alex Belianinov, Alexander Tselev, Andrei A. Kolmakov, Sergei Kalinin
We report a synergistic approach of micro-Raman spectroscopic mapping and deep data analysis to study the distribution of crystallographic phases and ferroelastic domains in a defected Al-doped VO2 microcrystal. Bayesian linear unmixing revealed an uneven

Transient thermometry and high-resolution analysis of filamentary resistive switches

June 28, 2016
Author(s)
Jonghan Kwon, Chao-Yang Chen, Abhishek Sharma, Andrea Fantini, Malgorzata Jurczak, James A. Bain, Yoosuf Picard, Marek Skowronski, Andrew Herzing
We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry and high- resolution transmission electron microscopy (HRTEM). The thermometry shows

Atomic structural evolution during the reduction of a-Fe2O3 nanowires

June 20, 2016
Author(s)
Wenhui Zhu, Jonathan P. Winterstein, Itai Maimon, Qiyue Yin, Lu Yuan, Aleksey N. Kolmogorov, Renu Sharma, Guangwen Zhou
The atomic-scale reduction mechanism of α-Fe2O3 nanowires by H2 was followed using transmission electron microscopy to reveal the evolution of atomic structures and the associated transformation pathways for different iron oxides. The reduction commences

Near-field microwave microscopy of one-dimensional nanostructures

May 23, 2016
Author(s)
Samuel Berweger, Paul T. Blanchard, Rebecca C. Quardokus, Frank W. DelRio, Thomas Mitchell (Mitch) Wallis, Pavel Kabos, Sergiy Krylyuk, Albert Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic

Characterization of Buried Interfaces with Scanning Probe Microscopes

May 19, 2016
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces

Use of the Bethe Equation for Inner-Shell Ionization by Electron Impact

May 13, 2016
Author(s)
Cedric J. Powell, Xavier Llovet, Francesc Salvat
We analyzed calculated cross sections for K-, L-, and M-shell ionization by electron impact to determine the energy ranges over which these cross sections are consistent with the Bethe equation for inner-shell ionization. Our analysis was performed with K

Optical Fluorescence Microscopy for Spatially Characterizing Electron Transfer across a Solid-Liquid Interface on Heterogeneous Electrodes

April 28, 2016
Author(s)
Eric A. Choudhary, Jeyavel Velmurugan, James M. Marr, James A. Liddle, Veronika A. Szalai
Heterogeneous catalytic materials and electrodes are used for (electro)chemical transformations, including those important for energy storage and utilization. Due to the heterogeneous nature of these materials, activity measurements with sufficient spatial

A trade-off between the mechanical strength and microwave electrical properties of functionalized and irradiated carbon nanotube sheets

April 4, 2016
Author(s)
Tiffany S. Williams, Nate Orloff, James S. Baker, Sandi G. Miller, Bharath N. Natarajan, Jan Obrzut, Linda S. McCorkle, Marisabel Lebron-Colon, James Gaier, Michael A. Meador, James Alexander Liddle
Carbon nanotube sheets are novel implementation of carbon nanotubes that enable the tailoring of electrical and mechanical properties for applications in the automotive and aerospace industries. Small molecule functionalization and/or post-processing

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology

Silicon epitaxy on H-terminated Si (100) surfaces at 250deg C

March 31, 2016
Author(s)
Xiao Deng, Pradeep N. Namboodiri, Kai Li, Xiqiao Wang, Gheorghe Stan, Alline F. Myers, Xinbin Cheng, Tongbao Li, Richard M. Silver
Silicon on silicon growth at low temperatures has become increasing important due to its use to encapsulate buried nanoscale dopant devices. The performance of atomic scale devices is fundamentally affected by the quality of the silicon matrix in which the
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