Haney, P.
and Gaury, B.
(2016),
Probing surface recombination velocities in semiconductors using two-photon microscopy, Journal of Applied Physics, [online], https://doi.org/10.1063/1.4944597
(Accessed April 2, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Probing surface recombination velocities in semiconductors using two-photon microscopy
Published
Author(s)
,
Abstract
The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of the two-photon time-resolved microscopy technique allows for better measurements of bulk and subsurface interfaces properties. Here we propose an analysis of the diffusion problem related to this optical technique. Our three-dimensional treatment enables us to separate lifetime (recombination) from transport effects (diffusion) in the photoluminescence intensity. It also allows us to consider surface recombination boundary conditions with a variety of geometries: a single plane (representing an isolated exposed or buried interface), two parallel planes (representing two inequivalent interfaces), and a spherical surface (representing the enclosing surface of a grain boundary). We provide fully analytical results and scalings directly amenable to data fitting, and apply those to experimental data collected on heteroepitaxial CdTe/ZnTe/Si.Citation
Journal of Applied Physics
Volume
119
Issue
12
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 28, 2016, Updated November 10, 2018