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Nanotechnology

Nanometrology

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Displaying 201 - 225 of 866

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 8, 2016
Author(s)
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected STEM

Tomography of a probe potential using atomic sensors on graphene

November 7, 2016
Author(s)
Jonathan E. Wyrick, Donat F. Natterer, Yue Y. Zhao, Kenji Watanabe, Takashi Taniguchi, William G. Cullen, Joseph A. Stroscio
One of the great advances in our ability to probe the quantum world has been the ability to manipulate the electronic structure of materials by constructing artificial nanostructures on surfaces using atomic manipulation of single adatoms with scanning

Transmission Electron Microscope Calibration Methods for Critical Dimension Standards

October 13, 2016
Author(s)
Ndubuisi Orji, Ronald G. Dixson, Domingo I. Garcia-Gutierrez, Bunday Benjamin, M R. Bishop, Michael W. Cresswell, Richard Allen, John Allgair
One of the key challenges in critical dimension (CD) metrology is finding suitable dimensional calibration standards. The transmission electron microscope (TEM), which produces lattice-resolved images having scale traceability to the SI (International

Measuring the reactivity of a silicon-terminated probe

September 30, 2016
Author(s)
Adam Sweetman, Julian Stirling, Philipp Rahe, Philip Moriarty
It is generally accepted that the exposed surfaces of silicon crystals are highly reactive due to the dangling bonds which protrude into the vacuum. However, it is also well known that disordered nano-crystals can have radically different properties to the

Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy

September 30, 2016
Author(s)
Lawrence H. Robins, Elizabeth Horneber, Norman A. Sanford, Kristine A. Bertness, John B. Schlager
The carrier concentration in ensembles of n-type GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy was determined by curve-fitting analysis of Raman spectra, based on modeling of the carrier concentration dependence of the longitudinal

Volume Determination of Irregularly-shaped Quasi-spherical Nanoparticles

September 22, 2016
Author(s)
Ravikiran Attota
Nanoparticles (NPs) are widely used in diverse application areas, such as medicine, engineering, and cosmetics. The size (or volume) of NPs is one of the most important parameters for their successful application. It is relatively straightforward to

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

September 7, 2016
Author(s)
Arunima Singh, Albert Davydov, Francesca M. Tavazza, Lincoln J. Lauhon, Xiaochen Ren, Mercouri G. Kanatzidis, Lei Fang
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants

Evaluation of Carbon Nanotube Probes in Critical Dimension Atomic Force Microscopes

August 26, 2016
Author(s)
Jinho Choi, Byong Chon Park, Sang Jung Ahn, Dal-Hyun Kim, J Lyou, Ronald G. Dixson, Ndubuisi George Orji, Joseph Fu, Theodore V. Vorburger
The decreasing size of semiconductor features and the increasing structural complexity of advanced devices has placed continuously greater demands on manufacturing metrology-arising both from the measurement challenges of smaller feature sizes and the

Toward Clean Suspended CVD Graphene

August 26, 2016
Author(s)
Alexander Yulaev, Guangjun Cheng, Angela R. Hight Walker, Ivan Vlassiouk, Alline Myers, Marina S. Leite, Andrei Kolmakov
The application of suspended graphene as electron transparent supporting media in electron microscopy, vacuum electronics, and micromechanical devices requires the least destructive and maximally clean transfer from their original growth substrate to the

Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

August 9, 2016
Author(s)
Beomyong Hwang, Hwang Jeongwoon, Jong K. Yoon, Sungjun Lim, Sungmin Kim, Minjun Lee, Jeong H. Kwon, Hongwoo Baek, Dongchul Sung, Gunn Kim, Suklyun Hong, Jisson Ihm, Joseph A. Stroscio, Young Kuk
Securing a stable bandgap is an essential requirement for applications of graphene layers in switching devices. Theoretical studies have suggested creating a bulk bandgap and modified edge states with an asymmetry between the A and B sub-lattice sites of

Current status and future directions for in situ transmission electron microscopy

August 6, 2016
Author(s)
M. L. Taheri, Eric Stach, Ilke Arslan, Peter A. Crozier, Kabius Bernd, Thomas LaGrange, Andrew Minor, Seiji Takeda, Mihaela M. Tanase, Jakob B. Wagner, Renu Sharma
This review article discusses the current and future possibilities for the application of in situ transmission electron microscopy to reveal synthesis pathways and functional mechanisms in complex and nanoscale materials. The findings of a group of

Reversible adsorption kinetics of near surface dimer colloids

August 2, 2016
Author(s)
Paul NMN Salipante, Steven D Hudson
We investigate the effect of shape on reversible adsorption kinetics using colloidal polystyrene dimers near a solid glass surface as a model system. The interaction between colloid and wall is tuned using electrostatic, depletion, and gravity forces to

Electrospray Differential Mobility Hyphenated with Single Particle Mass Spectrometry for Characterization of Nanoparticles and their Aggregates

August 1, 2016
Author(s)
Jiaojie Tan, Jingyu Liu, Mingdong M. Li, Hind El Hadri, Vincent A. Hackley, Michael R. Zachariah
The hyphenation of electrospray-differential mobility analysis with single particle-inductively coupled plasma mass spectrometry (ES-DMA-spICP-MS) was demonstrated with the capacity for real- time size, mass and concentration measurement of nanoparticles
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