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Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure

Published

Author(s)

Beomyong Hwang, Hwang Jeongwoon, Jong K. Yoon, Sungjun Lim, Sungmin Kim, Minjun Lee, Jeong H. Kwon, Hongwoo Baek, Dongchul Sung, Gunn Kim, Suklyun Hong, Jisson Ihm, Joseph A. Stroscio, Young Kuk

Abstract

Securing a stable bandgap is an essential requirement for applications of graphene layers in switching devices. Theoretical studies have suggested creating a bulk bandgap and modified edge states with an asymmetry between the A and B sub-lattice sites of graphene. A transport measurement showed that a bandgap and enhanced edge transport are present in a graphene layer mechanically placed on a hexagonal boron nitride (h-BN) substrate. Existence of this type bandgap has not been verified using local probe measurements. Here, using scanning tunneling spectroscopy, we present evidence of the bulk bandgap in a graphene layer epitaxially grown on an h-BN substrate. We discovered that the bandgap is different at zigzag edges from that at armchair edges and in the bulk.
Citation
Scientific Reports
Volume
6

Keywords

graphene, band gap, scanning tunneling microscopy

Citation

Hwang, B. , Jeongwoon, H. , Yoon, J. , Lim, S. , Kim, S. , Lee, M. , Kwon, J. , Baek, H. , Sung, D. , Kim, G. , Hong, S. , Ihm, J. , Stroscio, J. and Kuk, Y. (2016), Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure, Scientific Reports, [online], https://doi.org/10.1038/srep31160, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918967 (Accessed May 23, 2022)
Created August 8, 2016, Updated October 12, 2021