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Electron Energy Loss Characterization of Plasmonic Resonance Characteristics of Titanium Nitride Thin Films

Published

Author(s)

Andrew Herzing, Urcan Guler, Xiuli Zhou, Alexandra Boltasseva, Vladimir Shalaev, Theodore Norris

Abstract

The plasmon resonance characteristics of refractory TiN thin-films has been analyzed using electron energy-loss spectroscopy (EELS). A bulk resonance was observed at 2.81 eV loss and a weaker surface resonance peak was detected at 2.05 eV. These findings were compared to optical simulations which showed strong agreement with the bulk value resonance. In contrast, the calculated surface resonance was located at 2.3 eV, which is significantly higher than that observed experimentally. Since no local chemical variations were detected via EELS, the discrepancy between the measured and simulated values is ascribed to a variation in carrier concentration, possibly due to interaction with the underlying MgO substrate.
Citation
Applied Physics Letters

Keywords

STEM , Plasmonics , EELS , Nanocharacterization

Citation

Herzing, A. , Guler, U. , Zhou, X. , Boltasseva, A. , Shalaev, V. and Norris, T. (2016), Electron Energy Loss Characterization of Plasmonic Resonance Characteristics of Titanium Nitride Thin Films, Applied Physics Letters, [online], https://doi.org/10.1063/1.4947442 (Accessed April 16, 2024)
Created April 29, 2016, Updated October 28, 2022