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Metrology

Electrical/electromagnetic metrology

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Displaying 326 - 350 of 473

The NIST Watt Balance: Recent Results and Future Plans

March 1, 1999
Author(s)
David B. Newell, Richard L. Steiner, Edwin R. Williams
The last remaining SI base unit defined by an artifact is the kilogram. The NIST watt balance has been designed to measure the ratio of mechanical to electrical power, linking the artifact kilogram, the meter, and the second to the practical realizations

A Problem in AC Quantized Hall Resistance Measurements and a Proposed Solution

November 1, 1998
Author(s)
Marvin E. Cage, Anne-Marie Jeffery
In all experiments reported to date the measurement values of the ac quantized Hall resistances R H varied with the applied current frequency, and differed significantly from the dc values of R H, making it difficult to use the ac quantum Hall effect as an

The Next Generation of the NIST Watt Balance

August 1, 1998
Author(s)
David B. Newell, Richard L. Steiner, Edwin R. Williams, Alain Picard
Reduction in the total uncertainty of the NIST Watt Balance is limited by the present configuration of the experiment. Most of the major relative uncertainty components arise from the fact that the experiment is performed in air. To reduce the contribution

Charge Offset and Noise in SET Transistors

July 1, 1998
Author(s)
Neil M. Zimmerman, J. L. Cobb
We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. Previous work has shown that significant time

Experimental Noise Sources in the NIST Watt Balance

July 1, 1998
Author(s)
Richard L. Steiner, David B. Newell, Edwin R. Williams
The present NIST Watt Balance has a relative combined standard uncertainty of about 145 nW/W. The final results of this phase of the experiment are presented. Improvements in the Type B (nonstatistical) uncertainty contributions, along with several

Fabrication of High-Value Standard Resistors

July 1, 1998
Author(s)
Ronald F. Dziuba, Dean G. Jarrett, L. L. Scott, Andrew J. Secula
The National Institute of Standards and Technology (NIST) has fabricated stable, transportable 10 MΩ} and 1 GΩ} standard resistors for use in an international comparison of high resistances. This fabrication process is being applied to the construction of

Improvements in 10 Kilohm Resistance Measurements at NIST

July 1, 1998
Author(s)
L. L. Scott
The 10 kilohm measurement system at the National Institute of Standards and Technology has been improved. The guarded resistance bridge is based on the Warshawsky bridge model and is self-balancing through the use of a precision feedback system. A unique

Resistance Measurement Assurance Program at NIST

July 1, 1998
Author(s)
Ronald F. Dziuba, June E. Sims
The National Institute of Standards and Technology (NIST) offers resistance Measurement Assurance Program (MAP) transfers at the 1 ohm} and 10 kohm} levels, to provide a method of assessing and maintaining the quality of a customer's measurement process

Evaluation of High-Voltage Impulse Waveforms Using Model-Based Deconvolution

June 1, 1998
Author(s)
Gerald FitzPatrick, Eric D. Simmon, J. Lagnese
Accurate measurement of high voltage (hv) impulse waveforms is of critical importance in the testing of hv apparatus and for fundamental insulation studies. Quantifying the measurement system errors can be performed by following procedures recommended by

NIST Measurement Assurance Program for Resistance

November 1, 1997
Author(s)
Paul A. Boynton, June E. Sims, Ronald F. Dziuba
The National Institute of Standards and Technology (NIST) offers resistance Measurement Assurance Program (MAP) transfers at the 1 ohm and 10 k ohm levels, to provide a method of assessing and maintaining the quality of a customer's measurement process

Modulation of the Charge of a Single-Electron Transistor by Distant Defects

September 1, 1997
Author(s)
Neil M. Zimmerman, J. L. Cobb, Alan F. Clark
We have systematically measured two-level fluctuator [TLF] noise in a single-electron tunneling transistor. From the amplitude, duty cycle, and presence of intermediate states, we conclude that there is a cluster of triggered TLF's in this case. The
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