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Metrology

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Displaying 2226 - 2250 of 2718

Capability in Rockwell C Scale Hardness

July 1, 2000
Author(s)
Walter S. Liggett Jr, Samuel Low, David J. Pitchure, Jun-Feng Song
A measurement system is capable if it produces measurements with uncertainties small enough for demonstration of compliance with product specifications. To establish the capability of a system for Rockwell C scale hardness, one must assess measurement

Evaluation of Standards for a 10 V MAP Service at NIST

July 1, 2000
Author(s)
Yi-hua D. Tang, June E. Sims
A Measurement Assurance Program (MAP) provides a method of assessing and maintaining the quality of a measurement process. Such a program has two parts: the operation of a set of statistical tools to ensure the predictable behavior of the standards and

Low-Frequency Impedance Calibrations at NIST

July 1, 2000
Author(s)
Andrew D. Koffman, Yui-May Chang
This paper presents an overview of the low-frequency impedance measurement services offered through the Impedance Calibration Laboratory (ICL) at the National Institute of Standards and Technology (NIST). Emphasis will be given to recent improvements as

Proposed Bullet Signature Comparisons Using Autocorrelation Functions

July 1, 2000
Author(s)
Jun-Feng Song, Theodore V. Vorburger
The National Institute of Standards and Technology (NIST) standard bullets and casings are intended as reference standards for crime laboratories to help verify that the computerized optical-imaging equipment in those laboratories is operating properly

Accurate Dimensional Metrology With Atomic Force Microscopy

June 1, 2000
Author(s)
Ronald G. Dixson, R Koning, Joseph Fu, Theodore V. Vorburger, Thomas B. Renegar
Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs are

Is a Production Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a pricipal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 nm and 100 nm linewidths and high aspect ratio structures, the scanning electron microscope (SEM) remains

Is a Production-Level Scanning Electron Microscope Linewidth Standard Possible?

June 1, 2000
Author(s)
Michael T. Postek, Andras Vladar, John S. Villarrubia
Metrology will remain a principal enabler for the development and manufacture of future generations of semiconductor devices. With the potential of 130 and l00-nanometer linewidths and high aspect ratio structures, the scanning electron microscope (SEM)

Linewidth Measurement Intercomparison on a BESOI Sample

June 1, 2000
Author(s)
John S. Villarrubia, Andras Vladar, J R. Lowney, Michael T. Postek, Richard A. Allen, Michael W. Cresswell, Rathindra Ghoshtagore
The effect of the instrument on the measurement must be known in order to generate an accurate linewidth measurement. Although instrument models exist for a variety of techniques, how does one assess the accuracy of these models? Intercomparisons between

The Neolithography Consortium

June 1, 2000
Author(s)
James E. Potzick
The role of process simulation in microlithography is becoming an increasingly important part of process control as wafer feature sizes become smaller than the exposure wavelength, because the pattern transfer from photomask to wafer is nonlinear. An

Molecular Measuring Machine Design and Measurements

May 1, 2000
Author(s)
John A. Kramar, Jay S. Jun, William B. Penzes, Fredric Scire, E C. Teague, John S. Villarrubia
We at the National Institute of Standards and Technology are building a metrology instrument called the Molecular Measuring Machine (M3) with the goal of performing nanometer-accuracy, two-dimensional, point-to-point measurements over a 50 mm by 50 mm area

Recent Developments in BIPM Voltage Standard Comparisons

May 1, 2000
Author(s)
D. Reymann, Thomas J. Witt, P. Vrabcek, Yi-hua D. Tang, Clark A. Hamilton, A. S. Katkov, Blaise Jeanneret, O. Power
The BIPM carries out a number of comparisons of DC voltage standards with National Metrology Institutes. These take the form of on-site comparisons of Josephson standards or bilateral comparisons using traveling standards based on Zener diodes. This paper

Laboratory Primary Standards

April 1, 2000
Author(s)
John D. Wright
Commonly used primary calibration techniques for the measurement of liquid and gas flows are described. The techniques described include: static gravimetric and dynamic gravimetric methods for both gases and liquids, liquid piston displacement provers

SEM Sentinel - SEM Performance Measurement System, Part 1

April 1, 2000
Author(s)
Alice V. Ling, Andras Vladar, Bradley N. Damazo, M A. Donmez, Michael T. Postek
This report describes the current design of a system for monitoring the performance of several major subsystems of a scanning electron microscope (SEM). The following subsystems and the associated functional parameters will be monitored. 1) Vacuum system

The Sensitivity of a Method to Predict a Capacitor's Frequency Characteristic

April 1, 2000
Author(s)
S. Avramov, Andrew D. Koffman, Nile M. Oldham, Bryan C. Waltrip
A joint effort between the U.S. Naval Academy and the National Institute of Standard and Technology (NIST) resulted in the development of a method to characterize the capacitance and dissipation factor of a set of commercial standard four terminal-pair

An Overview of Nano-Micro-Meso Scale Manufacturing at the NIST

March 13, 2000
Author(s)
E Amatucci, Nicholas Dagalakis, Bradley N. Damazo, Matthew A. Davies, John Evans, Jun-Feng Song, E C. Teague, Theodore V. Vorburger
The future of nano-, micro- and meso-scale manufacturing operations will be strongly influenced by a new breed of assembly and manufacturing tools that will be intelligent, flexible, more precise, include in-process production technologies and make use of
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