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Metrology

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Displaying 2026 - 2050 of 2718

CD-SEM Measurement of Line-Edge Roughness Test Patterns for 193-nm Lithography

July 1, 2003
Author(s)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)

Coherent imagin of nanoscale plasmon patterns with a carbon nanotue optical probe

July 1, 2003
Author(s)
R Hillenbrand, F Keilmann, P Hanarp, D S. Sutherland, J Aizpurua
We introduce a carbon nanotube as optical near-field probe and apply it to visualize the plasmon fields of metal nanostructures in both amplitude and phase at 30 nm resolution. With 91 nm Au disks designed for fundamental plasmon resonance, we observe the

Nanoscale Oxidation of Zirconium Surfaces: Kinetics and Mechanisms

July 1, 2003
Author(s)
Natalia Farkas, Li Zhang, E A. Evans, R Ramsier, John A. Dagata
We show that AFM-induced oxide features can be reproducibly formed on both Zr and ZrN surfaces, and that the growth rate decreases rapidly with increasing time. There is an increase in oxide-feature height with humidity for both systems, and an

Toward Traceability for At-line AFM Dimensional Metrology

July 1, 2003
Author(s)
Marylyn H. Bennett, Angela Guerry, Ronald G. Dixson, Michael T. Postek, Theodore V. Vorburger
The in-line and at-line measurement tools for critical dimension (CD) metrology in semiconductor manufacturing are technologically advanced instruments that exhibit excellent measurement repeatability - below one nanometer in some cases. Accuracy, however

Virtual Environment for Manipulating Microscopic Particles with Optical Tweezer

July 1, 2003
Author(s)
Thomas W. LeBrun, Kevin W. Lyons, Yong-Gu Lee
In this paper, we use virtual reality techniques to define an intuitive interface to a nanoscale manipulation device. This device utilizes optical methods to focus laser light to trap and reposition nano-to-microscopic particles. The underlying physics are

A Simulation Study of Repeatability and Bias in the CD-SEM

May 1, 2003
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines is determined by measurement repeatability and any sample-dependent biases. In order to ascertain the dependence of these quantities

Calibration Strategies for Overlay and Registration Metrology

May 1, 2003
Author(s)
Richard M. Silver, Michael T. Stocker, Ravikiran Attota, M R. Bishop, Jay S. Jun, Egon Marx, M P. Davidson, Robert D. Larrabee
Critical dimensions in current and next generation devices are driving the need for tighter overlay registration tolerances and improved overlay metrology tool accuracy and repeatability. Tool matching, performance evaluation, model-based metrology, and a

Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F

May 1, 2003
Author(s)
S Gonda, Joseph Fu, John A. Kramar, Richard M. Silver, Hui Zhou
Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH(4)F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of

Dependency of Morphology on Miscut Angle for Si(111) Etched in NH 4 F

May 1, 2003
Author(s)
Joseph Fu, Hui Zhou, John A. Kramar, Richard M. Silver, S Gonda
Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH 4F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of

Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage

May 1, 2003
Author(s)
N. Sullivan, Ronald G. Dixson, B Bunday, M Mastovich, P Knutruda, P Fabre, R Brandoma
Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total critical dimension (CD) uncertainty of up to 10 nm can arise from line slimming through a combination of the line slimming

Implementation of a Reference Measurement System Using CD-AFM

May 1, 2003
Author(s)
Ronald G. Dixson, Theodore V. Vorburger, Angela Guerry, Marylyn H. Bennett, B Bunday
International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of

New Method to Enhance Overlay Tool Performance

May 1, 2003
Author(s)
Ravikiran Attota, Richard M. Silver, Michael T. Stocker, Egon Marx, Jay S. Jun, M P. Davidson, Robert D. Larrabee
New methods to enhance and improve algorithm performance and data analysis are being developed at NIST for overlay measurement applications. Both experimental data and improved theoretical optical scattering models have been used for the study. We have

Overlay Metrology Simulations: Analytical and Experimental Validations

May 1, 2003
Author(s)
Joel L. Seligson, B Golovanevsky, J M. Poplawski, M E. Adel, Richard M. Silver
We have previously reported on an overlay metrology simulation platform, used for modeling both the effects of overlay metrology tool behavior and the impact of target design on the ultimate metrology performance. Since our last report, the simulations by

Updated NIST Photomask Linewidth Standard

May 1, 2003
Author(s)
J Pedulla, James E. Potzick, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

CCEM-K2 Key Comparison of 10 Mohm and 1 Gohm Resistance Standards

April 1, 2003
Author(s)
Dean G. Jarrett, Ronald F. Dziuba
An international comparison of dc resistance at 10 Mohm and 1 Gohm was organized under the auspices of the Consultative Committee for Electricity and Magnetism (CCEM) and piloted by the National Institute of Standards and Technology (NIST) with 14 other

Relative Permittivity and Refractive Index

March 28, 2003
Author(s)
Michael R. Moldover, K N. Marsh, J M. Barthel, R Buchner
Measurements of the relative electric permittivity (dielectric constant or relative permittivity) e(p,T) and refractive index of fluids n(p,T) as a function of the pressure and the temperature can be used to determine a wide range of thermodynamic

Critical Dimension and Overlay Metrology

March 1, 2003
Author(s)
Michael T. Postek, Marylyn H. Bennett
Critical dimension and overlay metrology are two of the important measurements made in semiconductor device fabrication. Critical dimension metrology is important to ensure that the product meets the design target and overlay metrology ensures correct
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