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Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F

Published

Author(s)

S Gonda, Joseph Fu, John A. Kramar, Richard M. Silver, Hui Zhou

Abstract

Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH(4)F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of triangular etch pits. We also found that for maximum uniformity and minimum roughness, a certain minimum miscut angle is required. This angle is related to the maximum clear terrace width, which in turn is related to the relative etching rate of the step-edge sites and the terrace sites.
Citation
Applied Physics Letters
Volume
82(18)

Keywords

atom-based dimensional metrology, atomically flat and ordered silicon, hydrogen terminated surfaces, metrology, silicon surfaces

Citation

Gonda, S. , Fu, J. , Kramar, J. , Silver, R. and Zhou, H. (2003), Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F, Applied Physics Letters (Accessed June 17, 2024)

Issues

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Created April 30, 2003, Updated October 12, 2021