Dependency of Morphology on Miscut Angle for Si(111) Etched in NH4F

Published

May 1, 2003

Author(s)

Joseph Fu, Hui Zhou, John A. Kramar, Richard M. Silver, S Gonda

Abstract

Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH₄F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of triangular etch pits. We also found that for maximum uniformity and minimum roughness, a certain minimum miscut angle is required. This angle is related to the maximum clear terrace width, which in turn is related to the relative etching rate of the step-edge sites and the terrace sites.

Citation

Applied Physics Letters

Volume

82

Issue

No. 18

Pub Type

Journals

Download Paper

Local Download

Keywords

atom-based dimensional metrology, atomically flat and ordered silicon, hydrogen terminated surfaces, metrology, silicon surfaces

Citation

Fu, J. , Zhou, H. , Kramar, J. , Silver, R. and Gonda, S. (2003), Dependency of Morphology on Miscut Angle for Si(111) Etched in NH₄F, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=823151 (Accessed October 17, 2025)