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Overlay Metrology Simulations: Analytical and Experimental Validations

Published

Author(s)

Joel L. Seligson, B Golovanevsky, J M. Poplawski, M E. Adel, Richard M. Silver

Abstract

We have previously reported on an overlay metrology simulation platform, used for modeling both the effects of overlay metrology tool behavior and the impact of target design on the ultimate metrology performance. Since our last report, the simulations by comparing them to both analytical calculations and to experimental results. The analytical validation is based on the classical calculation of the diffraction of a polarized plane wave from a perfectly conducting half plane. For the experimental validation, we chose an etched silicon wafer manufactured by International SEMATECH (ISMT) and characterized at National Institute of Standards and Technology (NIST). The advantages of this wafer are its well known topography and its suite of different metrology targets. A good fit to both analytical and experimental results is demonstrated, attesting to the capabilities of our enhanced simulation platform. The results for both the analytical and experimental validations are presented.
Proceedings Title
Proceedings of SPIE on Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, May 2003
Volume
5038
Issue
Pt. 1
Conference Dates
February 24, 2003
Conference Location
Santa Clara, CA, USA
Conference Title
Overlay and Registration Metrology I

Keywords

etched silicon wafer, maxwell calculations, metrology, modeling, optics, overlay, simulation

Citation

Seligson, J. , Golovanevsky, B. , Poplawski, J. , Adel, M. and Silver, R. (2003), Overlay Metrology Simulations: Analytical and Experimental Validations, Proceedings of SPIE on Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, May 2003, Santa Clara, CA, USA (Accessed February 23, 2024)
Created April 30, 2003, Updated October 12, 2021