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Jack A. Stone Jr., M Amer, Bryon S. Faust, Jay H. Zimmerman
We have studied a number of effects that can give rise to errors in small-angle measurement systems when they are used to calibrate artifacts such as optical polygons. Of these sources of uncertainty, the most difficult to quantify are errors associated
Critical Dimension (CD) control begins at the photomask. Therefore, photomask metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 100, 65 and 45 nanometer
Critical Dimension (CD) control begins at the photomask. Therefore, photomask metrology is a principal enabler for the development and manufacture of current and future generations of semiconductor devices. With the potential of 100, 65 and 45 nanometer
Michael T. Postek, Andras Vladar, Marylyn H. Bennett
Photomask dimensional metrology in the scanning electron microscope (SEM) has not evolved as rapidly as the metrology of resists and integrated circuit features on wafers. This has been due partly to the 4x (or 5x) reduction in the optical steppers and
Michael T. Postek, Andras Vladar, Marylyn H. Bennett, T Rice, R Knowles
Binary and phase-shifting chromium on quartz optical photomasks have been successfully investigated with high-pressure/environmental scanning electron microscopy. The successful application of this methodology to semiconductor photomask metrology is new
The Calibration Laboratories Accreditation Program was developed by the National Voluntary Laboratory Accreditation Program (NVLAP) at the National Institute of Standards and Technology (NIST) as a result of interest from private industry and at the
Estimating the shape and size of a scanning tunneling microscope (STM) tip before scanning is often necessary for the correct interpretation of the STM data. This is particularly essential when using the STM as a metrology tool. It is common among
We derive expressions for the intensity and polarization of light singly scattered by flake pigments or a rough surface beneath a smooth transparent coating using the ray or facet model. The distribution of local surface normals is used to calculate the
Concentrated suspensions present a number of technical challenges for characterization and monitoring of the solid phase. Recent developments have provided the means to analyze many concentrated systems directly or at solids loadings more closely
Tony L. Schmitz, John A. Dagata, Brian S. Dutterer, W G. Sawyer
Microfluidic systems for analytical, medical, and sensing applications integrate optical or electrical readouts in low-cost, low-volume consumption systems. Embedding chemically functionalized templates with nanoscale topography within these devices links
Richard M. Silver, H Zou, S Gonda, Bradley N. Damazo, Jay S. Jun, Carsten P. Jensen, Lowell P. Howard
We have developed a new implementation of a Michelson interferometer which has demonstrated better than 20 picometer resolution measurement capability. This new method uses a tunable diode laser as the light source with the laser wavelength continuously
Andras Vladar, Richard M. Silver, James E. Potzick, John S. Villarrubia
The purpose of this project was to explore the currently used mask metrology methods and tools, to further develop mask metrology, and to design, fabricate and measure a new, relevant, 193 nm phase shifting mask metrology mask. These tasks were
Li Ma, Jun-Feng Song, Eric P. Whitenton, Theodore V. Vorburger, J Zhou, A Zheng
The SRM (Standard Reference Material) 2460 standard bullets are developed at the National Institute of Standards and Technology (NIST) to support the National Integrated Ballistics Information Network (NIBIN), recently established by the Bureau of Alcohol
Jun-Feng Song, Eric P. Whitenton, Li Ma, Theodore V. Vorburger, A Zheng
The RM (Reference Material) 8240 standard bullets are developed at the National Institute of Standards and Technology (NIST) to support the National Integrated Ballistics Information Network (NIBIN), recently established by the Bureau of Alcohol, Tobacco
Ronald G. Dixson, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Brandon Park, Christine E. Murabito, Joaquin (. Martinez
The single crystal critical dimension reference materials (SCCDRM) project has been completed, and the samples for the SEMATECH member companies have been released for distribution. The final technology transfer report is currently undergoing revision and
An alternative technique for semiconductor metrology and inspection that minimizes, if not eliminates the sample charging is environmental or high pressure scanning electron microscopy. It offers the advantage and possible application of higher landing
High-pressure/environmental scanning electron microscopy has been used to successfully investigate binary and phase-shifting chromium on quartz optical photomasks. This methodology was also applied to patterned193 nm photoresist structures. The application
Variable-pressure/environmental scanning electron microscopy has been used for successful investigation binary and phase-shifting chromium on quartz optical photomasks. This methodology was also applied to patterned 193 nm photoresist structures. The