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Joseph J. Kopanski, Victor H. Vartanian, Vladimir Mancevski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin
This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication were
Maarten P. de Boer, Alex D. Corwin, Frank W. DelRio, W R. Ashurst
Friction and wear present both challenges and opportunities for micro- and nanosystems. In the sections that follow, we will describe theoretical underpinnings of multi-asperity friction, micromachined test structures to measure friction, and monolayer
In preparing specimens of thin films of copper for examination by electron backscatter diffraction (EBSD), surface preparation is often necessary to produce acceptable EBSD patterns. Typically, removal of a rough, damaged or oxidized layer of the surface
Kaushik Chatterjee, Sheng Lin-Gibson, William E. Wallace, Marian F. Young, Carl Simon Jr.
A combinatorial library approach was used to demonstrate that hydrogel scaffold modulus can enhance osteoblast differentiation driving formation of a 3-D graded tissue construct. Though many previous studies have focused on screening cell-material
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The
Brent A. Sperling, William A. Kimes, James E. Maslar, Pamela M. Chu
In this work, we develop a Fourier transform infrared spectroscopy-based method to measure the gas-phase dynamics occurring during atomic layer deposition of hafnium oxide using tetrakis (ethylmethylamido) hafnium and water vapor. We take advantage of the
Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific
Ronald G. Dixson, Donald Chernoff, Shihua Wang, Theodore V. Vorburger, Ndubuisi G. Orji, Siew-Leng Tan, Joseph Fu
The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have undertaken a three-way interlaboratory
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extraction
Brent A. Sperling, William A. Kimes, James E. Maslar
Tetrakis(ethylmethylamido)hafnium and water are commonly used precursors for atomic layer deposition of HfO2. Using reflection absorption infrared spectroscopy with a buried-metal-layer substrate, we probe surface species present during typical deposition
James E. Maslar, Ramon Cusco, Esther Alarcon-Llado, Luis Artus, Wilbur S. Hurst
We present a detailed investigation of the phonons and LO-phononplasmon coupled modes in the Ga1−x InxAsy Sb1−y alloy by means of Raman scattering. A generalization of the dielectric Raman lineshape model to quaternary alloys is described and used to