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Electronics

Semiconductors

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Displaying 951 - 975 of 1446

US Anti-Counterfeiting Standards Development Activities: An Overview

December 1, 2010
Author(s)
Yaw S. Obeng, Eric D. Simmon, YaShian Li-Baboud
Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effective

Low temperature transport properties and heat capacity of single-crystal Na8Si46

November 17, 2010
Author(s)
Stevce Stefanoski, Joshua B. Martin, George S. Nolas
The low temperature thermal conductivity, resistivity, and Seebeck coefficient of single-crystal Na8Si46 are investigated revealing the intrinsic low temperature transport properties of this material. Metallic conduction is observed, with a higher residual

Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)

November 2, 2010
Author(s)
Jessica M. Torres, Nathan Bakken, Christopher Stafford, Jian Li, Bryan D. Vogt
The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular glasses

Characterization of a Soluble Anthradithiophene Derivative

October 1, 2010
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R. Parkin, Xinran Zhang, John E. Anthony, David J. Gundlach
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily

Intercomparison of Methods for Detecting and Characterizing Voids in Bonded Wafer Pairs

October 1, 2010
Author(s)
Richard A. Allen, Andrew C. Rudack, David T. Read, Winthrop A. Baylies
The Wafer Bond Task Force of the SEMI MEMS Standards Committee has begun a round robin experiment to evaluate methods for identifying and characterizing voids in bonded wafer pairs for three-dimensional integrated circuit (3D IC) applications. Due to the

Defect depth profiling in gate dielectrics

September 29, 2010
Author(s)
Kin P. Cheung
Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods

Spatial Coherence in Electron-Beam Patterning

September 27, 2010
Author(s)
Ginusha M. Perera, Gila E. Stein, James Alexander Liddle
We demonstrate a simple method to identify noise sources in electron-beam systems and accurately quantify the resulting errors in feature placement. Line gratings with a 46 nm average pitch were patterned with electron-beam lithography (EBL) and measured

Reliability Issues of SiC MOSFETs: A Technology for High Temperature Environments

September 20, 2010
Author(s)
Liangchun (. Yu, Greg Dunne, Kevin Matocha, Kin P. Cheung, John S. Suehle, Kuang Sheng
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The MOS-controlled power devices are the most favorable structure, however, it is widely believed that silicon oxide on

Separation and Metrology of Nanoparticles by Nanofluidic Size Exclusion

August 11, 2010
Author(s)
Samuel M. Stavis, Jon C. Geist, Michael Gaitan
A nanofluidic approach to the separation and metrology of nanoparticles is demonstrated. Advantages of this approach include nanometer-scale resolution, nanometer-scale to submicrometer-scale range, mitigation of hydrodynamic and diffusional limitations to
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