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Electronics

Semiconductors

Search Publications

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Displaying 76 - 100 of 748

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

May 12, 2021
Author(s)
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure

Optoelectronic Intelligence

May 7, 2021
Author(s)
Jeff Shainline
To design and construct hardware for general intelligence, we must consider principles of both neuroscience and very-large-scale integration. For large neural systems capable of general intelligence, the attributes of photonics for communication and

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits

December 28, 2020
Author(s)
Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy
The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a

Methods for Characterization of Bioactivity Using Confocal Microscopy

December 1, 2020
Author(s)
Jirun Sun, Nancy Lin, Joy Dunkers, Sheng Lin-Gibson
One common tissue engineering approach for regenerating or replacing damaged tissues involves a porous polymeric scaffold. The scaffolds serve as the mechanical framework for cell attachment and growth, and generate an environment with features that span

A low-swelling, polymeric mixed conductor operating in aqueous electrolytes

November 30, 2020
Author(s)
Lee Richter, Tommaso Nicolini, Jokubas Surgailis, Achileas Savva, Guillaume Wantz, Olivier Dautel, Georges Hadiziioannou, Natalie Stingelin
Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake

Existence conditions for phononic frequency combs

November 5, 2020
Author(s)
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin

Storing and retrieving wavefronts with resistive temporal memory

October 10, 2020
Author(s)
Advait Madhavan, Mark D. Stiles
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

September 15, 2020
Author(s)
Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrom
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Author(s)
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

August 14, 2020
Author(s)
Robin P. Hansen, Amit K. Agrawal, Michael Shur, Jerry Tersoff, Babak Nikoobakht, Yuqin Zong
"Efficiency droop," i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p

Elucidating Charge Transport Mechanisms in Graphene Inks

August 7, 2020
Author(s)
Ana C. de Moraes1, Jan Obrzut, Vinod K. Sangwan, Julia R. Downing, Lindsay E. Chaney, Dinesh K. Patel, Randolph Elmquist, Mark C. Hersam
Solution-processed graphene inks using ethyl cellulose polymer as a binder/stabilizer were blade-coated into large area films. Systematic charge transport characterization showed graphene patterns with high mobility ( 160 cm2 V-1 s-1), low energy gap

Crystallographic Polarity Measurements in Two-Terminal GaN Nanowire Devices by Lateral Piezoresponse Force Microscopy

July 23, 2020
Author(s)
Matthew Brubaker, Alexana Roshko, Samuel Berweger, Paul T. Blanchard, Todd E. Harvey, Norman A. Sanford, Kristine Bertness
Lateral piezoresponse force microscopy (L-PFM) is demonstrated as a reliable method for determining the crystallographic polarity of individual, dispersed GaN nanowires that were functional components in electrical test structures. In contrast to PFM

The effect of strain on tunnel barrier height in silicon quantum devices

July 13, 2020
Author(s)
Ryan Stein, Michael Stewart
Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where QD

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Author(s)
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Anomalous accelerated negative-bias- instability (NBI) at low drain bias

June 30, 2020
Author(s)
Kin P. Cheung
We observed at very low drain bias an anomalous acceleration of Negative-bias-instability at room temperature, as if the channel temperature has been raised significantly. The channel width and channel length dependent of this acceleration suggest that in

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs

Efficient hybrid mixed-ion perovskite photovoltaics: in situ diagnostics of the roles of cesium and potassium alkali cation addition

June 19, 2020
Author(s)
Ming Chun Tang, Yuanyuan Fan, Dounya Barrit, Ruipeng Li, Hoang X. Dang, Siyuan Zhang, Timothy J. Magnanelli, Nhan V. Nguyen, Edwin J. Heilweil, Christina A. Hacker, Detlet-M Smilgies, Kui Zhao, Aram Amassian, Thomas D. Anthopoulos
Perovskite photovoltaics have made extraordinary progress in efficiency and stability in the past few years owing to process and formulation developments like antisolvent drip and mixed-cation mixed-halide compositions. Perovskite solar cells performance
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