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Electronics

Semiconductors

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Displaying 76 - 100 of 756

High-performance dual-gate graphene pH sensors

June 28, 2022
Author(s)
Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of biotechnology and biophysics, but existing techniques often lack sufficient resolution. Field-effect

Synthesis, crystal structure, and physical properties of BaSnS2

February 11, 2022
Author(s)
Wilarachchige Gunatilleke, Andrew May, Angela R. Hight Walker, Adam Biacchi, George Nolas
Phase-pure BaSnS2, with space group Pn21/c, was synthesized and the structural and physical properties were investigated. The thermal properties and optical measurements are reported for the first time. The Debye temperature and Sommerfeld coefficient were

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

May 12, 2021
Author(s)
X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye
In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure

Optoelectronic Intelligence

May 7, 2021
Author(s)
Jeff Shainline
To design and construct hardware for general intelligence, we must consider principles of both neuroscience and very-large-scale integration. For large neural systems capable of general intelligence, the attributes of photonics for communication and

Developing Single Layer MOS Quantum Dots for Diagnostic Qubits

December 28, 2020
Author(s)
Yanxue Hong, Aruna Ramanayaka, Ryan Stein, Joshua M. Pomeroy
The design, fabrication and characterization of single metal gate layer, metal-oxide- semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a

Methods for Characterization of Bioactivity Using Confocal Microscopy

December 1, 2020
Author(s)
Jirun Sun, Nancy Lin, Joy Dunkers, Sheng Lin-Gibson
One common tissue engineering approach for regenerating or replacing damaged tissues involves a porous polymeric scaffold. The scaffolds serve as the mechanical framework for cell attachment and growth, and generate an environment with features that span

A low-swelling, polymeric mixed conductor operating in aqueous electrolytes

November 30, 2020
Author(s)
Lee Richter, Tommaso Nicolini, Jokubas Surgailis, Achileas Savva, Guillaume Wantz, Olivier Dautel, Georges Hadiziioannou, Natalie Stingelin
Organic mixed conductors find use in batteries, bioelectronics technologies, neuromorphic computing and sensing. While great progress has been achieved, polymer-based mixed conductors frequently experience significant volumetric changes during ion uptake

Existence conditions for phononic frequency combs

November 5, 2020
Author(s)
Zhen Qi, Curtis R. Menyuk, Jason Gorman, Adarsh V. Ganesan
Recently, the mechanical analog of optical frequency combs, phononic frequency combs, have been demonstrated in mechanical resonators and have gained interest since their comb frequencies can be in the range of kilohertz to gigahertz. The physical origin

Storing and retrieving wavefronts with resistive temporal memory

October 10, 2020
Author(s)
Advait Madhavan, Mark D. Stiles
We extend the reach of temporal computing schemes by developing a memory for multi-channel temporal patterns or "wavefronts." This temporal memory re-purposes conventional one-transistor-one-resistor (1T1R) memristor crossbars for use in an arrival-time

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

September 15, 2020
Author(s)
Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrom
Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Author(s)
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)

August 14, 2020
Author(s)
Robin P. Hansen, Amit K. Agrawal, Michael Shur, Jerry Tersoff, Babak Nikoobakht, Yuqin Zong
"Efficiency droop," i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p
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