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Anomalous accelerated negative-bias- instability (NBI) at low drain bias

Published

Author(s)

Kin P. Cheung

Abstract

We observed at very low drain bias an anomalous acceleration of Negative-bias-instability at room temperature, as if the channel temperature has been raised significantly. The channel width and channel length dependent of this acceleration suggest that in addition to the conventional self-heating effect that raises the lattice temperature, there is indication that hot holes thermalized at a temperature (Te) higher than the lattice temperature (TL) is the cause of this anomaly. Analysis of the frequency dependent of drain bias modulation, as well as the wave shape dependent of the modulation support this explanation.
Proceedings Title
2020 International Reliability Physics Symposium
Conference Dates
April 28-May 30, 2020
Conference Location
Virtual Dallas, TX

Keywords

MOSFET, BTI, electron temperature, hot phonon

Citation

Cheung, K. (2020), Anomalous accelerated negative-bias- instability (NBI) at low drain bias, 2020 International Reliability Physics Symposium, Virtual Dallas, TX, [online], https://doi.org/10.1109/IRPS45951.2020.9128354 (Accessed October 17, 2021)
Created June 29, 2020, Updated July 14, 2020