NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Published

Author(s)

Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrom

Abstract

Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
Citation
Journal of Applied Physics
Pub Type
Journals

Download Paper

Local Download

Keywords

Epitaxy, surface science, interfaces, Josephson junctions, tunnel junctions
Superconducting electronics, Semiconductors and Quantum information science

Citation

McFadden, A. , Goswami, A. , Seas, M. , McRae, C. , Zhao, R. , Pappas, D. and Palmstrom, C. (2020), Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=930880 (Accessed October 1, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created September 15, 2020, Updated September 29, 2025
Was this page helpful?