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Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide

Published

Author(s)

X. Lyu, M. Si, Pragya Shrestha, Kin (Charles) Cheung, P. D. Ye

Abstract

In this paper, we review the ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with crossbar metal-insulator-metal (MIM) structures including materials development, device fabrication, structure optimization and ultrafast electrical pulse measurement setup. Observation of a record low sub-nanosecond characteristic switching time of 925 ps was achieved on a single crossbar structure and a record fast polarization switching of 360 ps was achieved with 0.1 μm2 crossbar array device structure respectively. The impact of electric field, film thickness and device area on the polarization switching speed is systematically studied and the results are supported by a framework of nucleation limited switching model.
Conference Dates
April 8-11, 2021
Conference Location
Chengdu, CN
Conference Title
2021 5th IEEE Electron Devices Technology Manufacturing Conference (EDTM)

Keywords

Hafnium zirconium oxide, polarization switch, ultrafast pulse measurement

Citation

Lyu, X. , Si, M. , Shrestha, P. , Cheung, K. and Ye, P. (2021), Dynamics studies of polarization switching in ferroelectric hafnium zirconium oxide, 2021 5th IEEE Electron Devices Technology Manufacturing Conference (EDTM), Chengdu, CN, [online], https://doi.org/10.1109/EDTM50988.2021.9421035 (Accessed May 17, 2022)
Created May 12, 2021, Updated May 10, 2022