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Journals

International Comparison of Impact Reference Materials (2004)

Author(s)
Christopher N. McCowan, G. Roebben, Y. Yamaguchi, S. Lefrancois, Jolene D. Splett, S. Takagi, A. Lamberty
A three-year horizontal comparison has been completed between national laboratories that certify specimens for the indirect verification of Charpy impact test...

The evaluation of an autosomal SNP 12-plex assay

Author(s)
Peter M. Vallone, Amy E. Decker, Michael D. Coble, John M. Butler
SNPs have the potential to play a useful role in human identification testing. Small PCR amplicon sizes associated with SNP typing technologies make SNPs...

SANS and XRR Porosimetry of a Polyphenylene Low-k Dielectric

Author(s)
M S. Silverstein, Michael Shach-Caplan, Barry J. Bauer, R C. Hedden, V. J. Lee, B G. Landes
Nanometer scale porosity is being introduced into low-k dielectrics in an attempt to achieve the permittivities of less than 2.0. X-ray reflectivity (XRR)...

Programmable Vector Point-Spread Function Engineering

Author(s)
M R. Beversluis, L Novotny, Stephan J. Stranick
We use a nematic liquid crystal spatial light modulator (SLM) to control the vector point spread function of a microscope objective by manipulating the pupil...

New Guidelines for d13C Measurements

Author(s)
T Coplen, W A. Brandt, M Gehre, Manfred Groning, HAJ Meijer, Blaza Toman, Jennifer R. Verkouteren
Consistency of 13C measurements can be improved 39-47% by anchoring the 13C scale with two isotopic referencematerials differing substantially in 13C/12C. It...

Semantic Enterprise Application Integration Standards

Author(s)
Nenad Anicic, Zuran Marjanovic, Nenad Ivezic, Albert T. Jones
This paper investigates the potential of the Semantic Web technologies to support a semantic-based Enterprise Application Integration (EAI) standards...

Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics

Author(s)
Da-Wei Heh, Eric M. Vogel, J B. Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This...
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