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Conferences

TSOM Method for Semiconductor Metrology

Author(s)
Ravikiran Attota, Ronald G. Dixson, John A. Kramar, James E. Potzick, Andras Vladar, Benjamin D. Bunday, Erik Novak, Andrew C. Rudack
Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement resolution using conventional optical

SHREC’11 Track: Generic Shape Retrieval

Author(s)
Helin Dutagaci, Afzal A. Godil
In this paper we present the results of the 3D Shape Retrieval Contest 2011 (SHREC’11) track on generic shape retrieval. The aim of this track is to evaluate

MODELING OF U.S. CORN ETHANOL INDUSTRIAL GROWTH

Author(s)
Deogratias Kibira, Guodong Shao, Stephen Nowak
The production capacity of corn ethanol as a transportation fuel is experiencing rapid growth in the United States. The demand is driven by increased prices of

A New Interface Defect Spectroscopy Method

Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in

A New Interface Defect Spectroscopy Method

Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in

Evaluation of 3D Interest Point Detection Techniques

Author(s)
Helin Dutagaci, Chun Pan (Benny) Cheung, Afzal A. Godil
In this paper, we compare the results of five 3D interest point detection techniques to the interest points marked by human subjects. This comparison is used to

Salient Local 3D Features for 3D Shape Retrieval

Author(s)
Afzal A. Godil, Asim Wagan
In this paper we describe a new formulation for the 3D salient local features based on the voxel grid inspired by the Scale Invariant Feature Transform (SIFT)

Optics contamination studies in support of high-throughput EUV lithography tools

Author(s)
Shannon B. Hill, Fardina Asikin, Lee J. Richter, Steven E. Grantham, Charles S. Tarrio, Thomas B. Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST

Innovative Marketing Tools and Strategies

Author(s)
Stacy M. Bruss, Nancy Allmang
Tipsheet to be handed out at following talk: In an increasingly digital world, the ways that customers interact with their library and recognize the services
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