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Nanotechnology

Nanoelectronics

Projects/Programs

Displaying 1 - 25 of 36
Schematic of interface engineering 2D materials.

Chemical Functionalization and Manipulation of Nano Materials

Completed
This project focuses on manipulating nanomaterials, including weakly bonded van der Waals systems, and probing emergent phenomena in these nanoengineered systems to impact technologies such as nanoelectronics, optoelectronics, quantum sensing, and quantum computing. Developing processes to
joint quantum institute

Designing the Nanoworld: Nanostructure, Nanodevices, and Nano-optics

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the
EUV graphs

Dynamic EUV Imaging and Spectroscopy for Microelectronics

Ongoing
Collaborations with industry leaders have led us to develop new measurement techniques to improve our understanding thermal transport, spin transport, and nanoscopic (and interfacial) material properties in active device structures. Such capability requires the ability to measure these properties at
2D Material Electronic Test

Electronic Material Characterization

Ongoing
Manufacturing optimized devices that incorporate newly-emerging materials requires predictable performance throughout device lifetimes. Unexpected degradation in device performance, sometimes leading to failure, is often traceable to poor material reliability. Reliability is rooted in the stability
circuit

Emerging Hardware for Artificial Intelligence

Ongoing
Here is a brief description of our work with links to recent papers from our investigations, broadly classified as experimental and modeling. A brief overview of Josephson junction-based bio-inspired computing can be found in our review article. Experimental We have facilities to develop our devices
Electron microscopy images

GaN Nanowire Growth

Ongoing
Selective epitaxy: We have demonstrated that the diameter and placement of nanowires can be controlled by using silicon nitride (SiNx) masks on top of MBE-grown buffer layers (see figure). With electron beam lithography, several patterns with 3 mm die size that provide over 100,000 controlled
nanowires

GaN Nanowire Metrology and Applications

Ongoing
GaN Nanowire LEDs: Our selective epitaxy methods and dopant characterization techniques have enabled fabrication of arrays of nanowire LEDs with controlled location and spatial layout. This development is complemented by modeling of the carrier flow and recombination. These LEDs were combined to
Microscope image of a crossbar array

Hardware Accelerators for Neural Networks

Ongoing
One promising candidate for building a hardware accelerator comes from the field of spintronics, where information is carried by electronic spin rather than charge. Magnetic tunnel junctions are particularly suited because of their multifunctionality and compatibility with standard integrated
Temporal Chip

Hardware Accelerators for Statistical Computing

Ongoing
Finding good solutions to many hard problems, like combinatorial optimization and traveling salesman problems, counterintuitively requires making the estimated solution worse before making it better. This situation results from many hard problems having many “solutions” that cannot be improved
Small array of transistors designed for single device integration.

Integrated CMOS Testbeds for Nanoelectronics and Machine Learning

Ongoing
The increasingly complex device requirements for next-generation computing architectures such as neuromorphic computing or nanoelectronic machine learning accelerators present challenges for researchers across the spectrum of institutions, from small businesses and universities to government
Schematic illustration of the integrated near-field optoelectronic (INFO) probe showing light emission, microwave reflection lines for measuring specimen conductivity and/or magnetization, and simultaneous contact topography feedback.  

Integrated Near-field Optoelectronic (INFO) Scanning Probe

Ongoing
In a collaboration between the Nanoelectromagnetics Project and the Quantitative Imaging Project, we have fabricated and tested a GaN nanowire mounted on an AFM tip as a near-field scanning microwave microscopy (NSMM ) tip (see Fig. 2(a) below ). A tungsten atomic layer deposition (ALD) coating
Crossbar Memory Arrays

Integrated Testbeds for Advanced Metrology

Ongoing
Crossbar Memory Arrays An especially prolific structure in memory architectures aimed at accelerating neural network operation is the crossbar array (Fig. 1). We produce medium-scale arrays that hold up to 20,000 nanodevices which can be characterized, read from, and written to individually or in

Light-matter interactions in Semiconductor Nanostructures

Ongoing
We investigate the interaction of light with semiconductor-based nanostructures. We extend concepts of entanglement and coherence in atomic physics to our solid-state systems. Our devices are based on semiconductors, like GaAs. We use InAs quantum dots (QDs) in GaAs as artificial atoms; they have

Magnetic Random Access Memory

Ongoing
Focus areas include (1) the fundamental understanding of the interactions between spin and magnetic materials and materials with large spin-orbit scattering; (2) the nonlinear dynamics of both individual and interacting nanoscale magnetic systems; and (3) the role of thermal noise in nanomagnetic
Custom-built wafer level probes in position to perform EDMR measurements on fully processed transistors.

Magnetic Resonance Spectroscopy

Ongoing
Custom-built wafer level probes in position to perform EDMR measurements on fully processed transistors. Electronics are all around us and have completely reinvented nearly every aspect of our society. Virtually any system, large or small, contains some type of electronics that may or may not be
STM image of the surface states of a topological insulator - 3D perspective

Measuring Topological Insulator Surface State Properties

Ongoing
A family of TI materials can by synthesized by combining binary compounds of Bismuth (Bi) or Antimony (Sb) with Selenium (Se) and Tellurium (Te) to form Bi 2Se 3, Bi 2Te 3, and Sb 2Te 3 compounds. In these material compounds the spin of the electron has a strong interaction with the motion of the
CDSAXS instrument

Metrology for Nanolithography

Ongoing
Small Angle Scattering techniques are employed to measure, with sub-nm precision, pattern shape, dimensions, and orientation for structures created in periodic arrays. Critical-Dimension Small Angle X-ray Scattering (CD-SAXS) utilizes the variable-angle transmission scattering from a small beam size
A micromechanical bulk acoustic resonator that uses phononic crystal tethers to achieve a quality factor approaching the fundamental dissipation limit (fxQ can be as large as 1.2 x 1013 Hz)

Micro- and Nanoelectromechanical Systems

Completed
MEMS/NEMS are enabling technologies that bring new functionalities with the potential to radically transform markets ranging from consumer products to national defense. The meteoric rise of the smartphone is an excellent example, in which MEMS accelerometers, gyroscopes, microphones, displays, and

Micro- and nano-optomechanical systems

Ongoing
Our primary current research direction involves the use of fabricated devices with sub-wavelength periodicity (photonic crystals) as optomechanical elements. Such structures enable a rich variety of devices, including mirrors, polarizers, and filters, in a configuration that couples naturally to

Nanocalorimetry

Ongoing
The global market for semiconductor chips is $270 billion. Growth in this industry is driven by the need to enhance performance by packing more transistors into the same chip area, with a relationship between feature size and time that approximately follows Moore's Law. As the feature size shrinks
(a) Schematic of a near-field scanning microwave microscope (NSMM). (b) NSMM images of a perovskite PV sample, (c) NSMM MoS2 back-gate device, (d) Spatial imaging of excited spin wave modes.

Nanoelectromagnetics

Ongoing
The primary goal of this program is metrology that enables advanced nanoscale device (including electronics, spintronics, and life science) development. Based on current trends in electronics, we are focusing on metrology for two classes of devices: (1) nanoscale devices utilizing and exploring new
A scanning electron micrograph of a QDOGFET device used for photon number-resolving detection.

Nanostructure Fabrication and Metrology

Completed
This project develops semiconductor nanostructures, especially self-assembled quantum dots and photonic crystals, for a variety of applications including single photonics, laser diodes, and quantum optical metrology. It also develops quantum optical metrology based on other sources and detectors
Layout of the Nanotechnology Xccelerator Reticle with 30 unique tiles occupying 41 different slots within the reticle.

The Nanotechnology Xccelerator

Ongoing
The Nanotechnology Xccelerator was announced on September 13, 2022 and was officially accepted for production at Skywater Technology Foundry using the Sky130 technology in Q1 2024. Sky130, which comes in both a conventional and open-source process design kit, is a 5-metal layer process. To