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Search Publications by: Bosworth Bryan (Fed)

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Displaying 1 - 8 of 8

Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz

November 15, 2023
Author(s)
Rob Jones, Jerome Cheron, Bryan Bosworth, Ben Jamroz, Dylan Williams, Miguel Urteaga, Ari Feldman, Peter Aaen
In this paper, we investigate the effect of two calibration errors, probe placement and capacitance per unit length, on transistor characterization from 220 GHz to 325 GHz on both a microstrip and an inverted coplanar waveguide with a via stitched ground

Electro-Optic Imaging Millimeter-Wave Propagation On-Wafer

September 27, 2023
Author(s)
Bryan Bosworth, Nick Jungwirth, Jerome Cheron, Franklyn Quinlan, Nate Orloff, Chris Long, Ari Feldman
We demonstrate an electro-optic imaging system for mmWaves propagating along a coplanar waveguide. Using dual optical frequency combs and a polarization resolved microscope, we image signals with bandwidth >100 GHz and >48 dB dynamic range.

Measuring the permittivity tensor of anisotropic DyScO3 to 110 GHz

August 14, 2023
Author(s)
Florian Bergmann, Meagan Papac, Nick Jungwirth, Bryan Bosworth, Tomasz Karpisz, Anna Osella, Lucas Enright, Eric Marksz, Angela Stelson, Chris Long, Nate Orloff
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not

Electro-Optically Derived Arbitrary Millimeter-Wave Sources with 100 GHz of Bandwidth

May 20, 2022
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassiopeia Smith, Jerome Cheron, Franklyn Quinlan, Madison Woodson, Jesse Morgan, Andreas Beling, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
We demonstrate fine phase and amplitude control of millimeter waves, measured on-wafer using an electro-optic frequency comb, programmable spectral filter, and a uni-traveling carrier photodiode. We then synthesize arbitrary waveforms with 100 GHz of

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Electro-optically derived millimeter-wave sources with phase and amplitude control

October 12, 2021
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassi Smith, Jerome Cheron, Franklyn Quinlan, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
Integrated circuits are building blocks in millimeter-wave handsets and base stations, requiring nonlinear characterization to optimize performance and energy efficiency. Today's sources use digital-to-analog converters to synthesize arbitrary electrical

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

May 10, 2020
Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electronics industry.