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Search Publications by: Albert F. Rigosi (Fed)

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Displaying 51 - 75 of 93

AC and DC Quantized Hall Array Resistance Standards

August 28, 2020
Author(s)
Randolph E. Elmquist, Mattias Kruskopf, Dinesh K. Patel, I Fan Hu, Chieh-I Liu, Albert F. Rigosi, Alireza R. Panna, Shamith U. Payagala, Dean G. Jarrett
Quantized Hall array resistance standards (QHARS) span values from 100 (ohm) to 1 M(ohm) and demonstrate precision approaching that of single devices. This paper focuses on QHARS having values near 1 k(ohm) for increased sensitivity using room-temperature

Graphene quantum Hall effect devices for AC and DC resistance metrology

August 28, 2020
Author(s)
Mattias Kruskopf, Dinesh K. Patel, Chieh-I Liu, Albert Rigosi, Randolph Elmquist, Yicheng Wang, Stefan Bauer, Yefei Yin, Klaus Pierz, Eckard Pesel, Martin Goetz, Jurgen Schurr
The frequency dependence of the quantized Hall resistance at alternating current results from capacitive losses inside the sample as well as between the sample and external parts. In this joint effort we report on ac quantum Hall measurements of a graphene

Advanced Temperature-Control Chamber for Resistance Standards

April 10, 2020
Author(s)
Shamith Payagala, Alireza Panna, Albert Rigosi, Dean G. Jarrett
Calibration services for resistance metrology have continued to advance their capabilities and establish new and improved methods for maintaining standard resistors. Despite the high quality of these methods, there still exist inherent limitations to the

A self-assembled graphene ribbon grown on SiC

January 2, 2020
Author(s)
Bi Y. Wu, Yanfei Yang, Albert Rigosi, Jiuning Hu, Hsin Y. Lee, Guangjun Cheng, Vishal Panchal, Mattias Kruskopf, Hanbyul Jin, Kenji Watanabe, Takashi Taniguchi, David B. Newell, Randolph Elmquist, Chi-Te Liang

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

December 16, 2019
Author(s)
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work

Comparison of Multiple Methods for Obtaining PO Resistances with Low Uncertainties

September 3, 2019
Author(s)
Kwang Min Yu, Dean G. Jarrett, Albert Rigosi, Shamith Payagala, Marlin E. Kraft
Capabilities for high resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single electron transport, and ion beam technologies

Designing new structures in epitaxial graphene on SiC: transport and quantum effects

May 13, 2019
Author(s)
Randolph E. Elmquist, Hanbyul Jin, Mattias Kruskopf, Martina Marzano, Dinesh K. Patel, Alireza R. Panna, Albert F. Rigosi
When epitaxial graphene (EG) grows on hexagonal SiC(0001), chemical doping is produced by bonds at the epitaxial interface, or buffer layer. Robust quantum Hall effect (QHE) plateaus are observed at RK/2 = h/2e2, where RK is a constant of electrical
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