February 20, 2019
Author(s)
Jungjoon Ahn, Santiago D. Solares, Lin You, Hanaul Noh, Joseph Kopanski, Yaw S. Obeng
In this paper, we demonstrate AFM probe assisted deterministic doping (PADD) of Al into an n- type Si (100) wafer, to generate nanoscale counter-doped junctions with a few nanometers depth from Si surface. The local electrical potential changes resulting