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Search Publications by Gheorghe Stan

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Displaying 1 - 25 of 39

Doping of MoTe2 via surface charge-transfer in ambient air

Gheorghe Stan, Cristian Ciobanu, Sri Ranga Jai Likith, Asha Rani, Sergiy Krylyuk, Albert Davydov
Doping is a key process that facilitates the use of semiconductors for electronic and optoelectronic devices, by which the concentration and type of majority

PEGylation of zinc nanoparticles amplifies their ability to enhance olfactory responses to odorant

Melissa Singletary, Samantha Hagerty, Shinichiro Muramoto, Yasmine Daniels, William A. MacCrehan, Gheorghe Stan, June W. Lau, Oleg Pustovyy, Ludmila Globa, Edward E. Morrison, Iryna Sorokulova, Vitaly Vodyanoy
Responses of olfactory sensory neurons to odorants are intensely enhanced with the addition of small endogenous and engineered zinc nanoparticles, as shown by

After oxidation, zinc nanoparticles lose their ability to enhance responses to odorants

Samantha Hagerty, Yasmine C. Daniels, Melissa Singletary, Oleg Pustovyy, Ludmila Globa, William A. MacCrehan, Shinichiro Muramoto, June W. Lau, Edward Morrison, Iryna Sorokulova, Vitaly Vodyanoy, Gheorghe NMN Stan
Electrical responses of olfactory sensory neurons to odorants were examined in the presence of zinc nanoparticles of various sizes and degrees of oxidation. The

Silicon epitaxy on H-terminated Si (100) surfaces at 250° C

Xiao Deng, Pradeep N. Namboodiri, Kai Li, Xiqiao Wang, Gheorghe Stan, Alline F. Myers, Xinbin Cheng, Tongbao Li, Richard M. Silver
Silicon on silicon growth at low temperatures has become increasing important due to its use to encapsulate buried nanoscale dopant devices. The performance of

Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport

Preparation of silver nanoparticle loaded cotton threads to facilitate measurement development for textile applications

Justin M. Gorham, Karen E. Murphy, Jingyu Liu, Dimitri Tselenchuk, Gheorghe NMN Stan, Thao M. Nguyen, Richard D. Holbrook, Michael R. Winchester, Robert F. Cook, Robert MacCuspie, Vincent A. Hackley
FOREWORD This NIST special publication (SP) is one in a series of NIST SPs that address research needs articulated in the National Nanotechnology Initiative

Influence of Network Bond Percolation on the Thermal, Mechanical, Electrical and Optical Properties of high and low-k a-SiC:H Thin Films

Gheorghe Stan, Sean King, Jeff Bielefeld, Gaunghai Xu, William Lanford, Yusuke Matsuda, Reinhold Dauskardt, Jonathan F. Stebbins, Donald Hondongwa, Lauren Olasov, Brian Daly, Ming Liu, Dhanadeep Dutta, David W. Gidley
As demand for lower power and higher performance nano-electronic products increases, the semiconductor industry must adopt insulating materials with

Ultimate bending strength of Si nanowires

Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this