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Search Publications by: Gheorghe Stan (Fed)

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Displaying 26 - 50 of 50

Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

February 17, 2016
Author(s)
Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook
The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is

Nanoscale buckling of ultrathin low-k dielectric lines during hard-mask patterning

May 7, 2015
Author(s)
Gheorghe Stan, Cristian V. Ciobanu, Igor Levin, Mark van Veenhuizen, Alan Myers, Kanwal Singh, Christopher Jezewski, Barbara Miner, Sean King
Commonly known in macroscale mechanics, buckling phenomena are now frequently also encountered in the nanoscale world as reveled in today's cutting-edge fabrication of microelectronics. The description of nanoscale buckling requires precise dimensional and

Preparation of silver nanoparticle loaded cotton threads to facilitate measurement development for textile applications

January 26, 2015
Author(s)
Justin Gorham, Karen Murphy, Jingyu Liu, Dimitri Tselenchuk, Gheorghe Stan, Thao M. Nguyen, Richard D. Holbrook, Michael Winchester, Robert F. Cook, Robert MacCuspie, Vincent Hackley
FOREWORD This NIST special publication (SP) is one in a series of NIST SPs that address research needs articulated in the National Nanotechnology Initiative (NNI) Environmental, Health, and Safety Research Strategy published in 2011 [1]. This Strategy

Mechanical property changes in porous low-k dielectric thin films during processing

October 15, 2014
Author(s)
Gheorghe Stan, Richard S. Gates, Premsagar P. Kavuri, Jessica Torres, David Michalak, Canay Ege, Jeff Bielefeld, Sean W. King
The design of future generations of Cu-low-k dielectric interconnects with reduced electronic crosstalk often requires engineering materials with an optimal trade off between their dielectric constant and elastic modulus. This is because the benefits

Intermittent contact resonance atomic force microscopy

May 23, 2014
Author(s)
Gheorghe Stan, Richard S. Gates
The intermittent contact resonance atomic force microscopy (ICR-AFM) mode proposed here is a new frequency modulation technique performed in scanning force controlled AFM modes like force volume or peak force tapping. It consists of tracking the change in

Nanoscale mechanics by tomographic contact resonance atomic force microscopy

January 23, 2014
Author(s)
Gheorghe NMN Stan, Santiago Solares, Bede Pittenger, Natalia Erina, Chanmin Su
We report on a quantifiable depth-dependent contact resonance AFM (CR-AFM) measurements over polystyrene-polypropylene (PS-PP) polymer blends to detail surface and sub-surface features in terms of elastic modulus and mechanical dissipation. The depth

Influence of Network Bond Percolation on the Thermal, Mechanical, Electrical and Optical Properties of high and low-k a-SiC:H Thin Films

August 25, 2013
Author(s)
Gheorghe Stan, Sean King, Jeff Bielefeld, Gaunghai Xu, William Lanford, Yusuke Matsuda, Reinhold Dauskardt, Jonathan F. Stebbins, Donald Hondongwa, Lauren Olasov, Brian Daly, Ming Liu, Dhanadeep Dutta, David W. Gidley
As demand for lower power and higher performance nano-electronic products increases, the semiconductor industry must adopt insulating materials with progressively lower dielectric constants (i.e. low-k) in order to minimize capacitive related power losses

3-Aminopropyltriethoxysilane Functionalization and Biotinylation of 4H-SiC for Immobilization of Streptavidin

June 1, 2012
Author(s)
Elissa H. Williams, Albert Davydov, John A. Schreifels, Mulpuri V. Rao, Abhishek Motayed, Siddarth Sundaresan, Peter Bocchini, Lee J. Richter, Gheorghe Stan, Kristen L. Steffens, Rebecca A. Zangmeister
(0001) 4H-SiC was functionalized with 3-aminopropyltriethoxysilane (APTES) and subsequently biotinylated for the immobilization of streptavidin. Atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), ellipsometry, fluorescence microscopy

Ultimate bending strength of Si nanowires

April 11, 2012
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Igor Levin, Robert F. Cook
Test platforms for the ideal strength of materials are provided by almost defect-free nanostructures (nanowires, nanotubes, nanoparticles, for example). In this work, the ultimate bending strengths of Si nanowires with radii in the 20 nm to 60 nm range

Nanomechanical properties of polyethylene glycol brushes on gold substrates

February 15, 2012
Author(s)
Gheorghe NMN Stan, Frank W. DelRio, Robert I. MacCuspie, Robert F. Cook
Brushes of polyethylene glycol (PEG) were directly anchored onto bare gold substrates in solution. The nucleation kinetics of PEG binding were investigated successively in solution and dry air using atomic force microscopy (AFM) imaging. In addition, force

Controlling Formation of Atomic Step Morphology on Micro-patterned Si (100)

August 9, 2011
Author(s)
Kai Li, Pradeep Namboodiri, Sumanth B. Chikkamaranahalli, Gheorghe Stan, Ravikiran Attota, Joseph Fu, Richard M. Silver
Micro scale features are fabricated on Si (100) surfaces using lithographic techniques and then thermally processed in an ultra high vacuum (UHV) environment. Samples are flash heated at 1200 °C and further annealed at 1050 °C for 18 hours. The surface

Structure-property relationships for methyl-terminated alkyl self-assembled monolayers

July 20, 2011
Author(s)
Frank W. DelRio, Dave Rampulla, Cherno Jaye, Gheorghe Stan, Richard S. Gates, Daniel A. Fischer, Robert F. Cook
Structure-property relationships for methyl-terminated alkyl self-assembled monolayers (SAMs) are developed using near-edge X-ray absorption fine structure spectroscopy (NEXAFS) and atomic force microscopy (AFM). NEXAFS C K-edge spectra are used to compute

Mechanical properties of one-dimensional nanostructures

May 23, 2010
Author(s)
Gheorghe Stan, Robert F. Cook
The elastic mechanical properties of one-dimensional nanostructures are considered, with an emphasis on the use of contact-resonance atomic force microscopy methods to determine elastic moduli. Various methods used to determine elastic moduli of one

Compressive stress effect on the radial elastic modulus of oxidized Si nanowires

March 23, 2010
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Robert F. Cook
Detailed understanding and optimal control of the properties of Si nanowires are essential steps in developing Si nanoscale circuitry. In this work, we have investigated mechanical properties of as-grown and oxidized Si nanowires as a function of their

Elastic Modulus of Faceted Aluminum Nitride Nanotubes Measured by Contact Resonance Atomic Force Microscopy

December 17, 2008
Author(s)
Gheorghe Stan, C Ciobanu, Timothy Thayer, George Wang, Randall Creighton, Premsagar P. Kavuri, Leonid A. Bendersky, Robert F. Cook
A new methodology for determining the radial elastic modulus of a one-dimensional nanostructure laid on a substrate has been developed. The methodology consists of the combination of contact resonance atomic force microscopy (AFM) with finite element

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the
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