Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

Published

February 17, 2016

Author(s)

Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook

Abstract

The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is modeled using finite element analysis (FEA) that is adapted to the near-indentation surface profile measured by atomic force microscopy (AFM). The assessment consists of (1) direct experimental comparisons of strain and deformation and (2) comparisons in which the modeled strain field is used as an intermediate step. Direct experimental methods (1) consist of comparisons of surface elevation and gradient measured by AFM and EBSD and of Raman shifts measured and predicted by CRM and EBSD, respectively. Comparisons that utilize the combined FEA-AFM model (2) consist of predictions of distortion, strain, and rotation for comparison with EBSD measurements and predictions of Raman shift for comparison with CRM measurements. For both EBSD and CRM convolution of measurements in depth-varying strain fields is considered. The interconnected comparisons suggest that EBSD was able to provide an accurate assessment of the wedge indentation deformation field to within the precision of the measurements, approximately 2 × 10-4 in strain. CRM was similarly precise, but was limited in accuracy to several time this value.

Citation

Ultramicroscopy

Volume

163

Pub Type

Journals

Download Paper

https://doi.org/10.1016/j.ultramic.2016.02.001

Local Download

Keywords

EBSD, AFM, CRM, FEA, Indentation, Strain

Citation

Friedman, L. , Vaudin, M. , Stranick, S. , Stan, G. , Gerbig, Y. , Osborn, W. and Cook, R. (2016), Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si, Ultramicroscopy, [online], https://doi.org/10.1016/j.ultramic.2016.02.001, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919078 (Accessed October 16, 2024)