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Search Publications by: Oleg Kirillov (Fed)

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Displaying 1 - 25 of 40

Non-contact Surface Conductance Measurement of Graphene using Resonant Cavity

October 10, 2016
Author(s)
Jan Obrzut, Oleg A. Kirillov
The measurement of conductance by a resonant cavity involves monitoring the resonant frequency shift and change in the quality factor before and after insertion of the specimen into the cavity. The method is applicable to carbon Vapor deposited (CVD)

Surface conductance of graphene from non-contact resonant cavity

March 15, 2016
Author(s)
Jan Obrzut, Caglar Dogu Emiroglu, Oleg A. Kirillov, Yanfei Yang, Randolph E. Elmquist
A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be synthesized by chemical vapor deposition (CVD), epitaxial growth on silicon carbide (SiC)

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

November 24, 2014
Author(s)
Wei Li, Qin Zhang, R. Bijesh, Oleg A. Kirillov, Yiran Liang, Igor Levin, Lianmao Peng, Xuelei Liang, S. Datta, David J. Gundlach, Nhan V. Nguyen
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the

Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

June 26, 2014
Author(s)
Hyuk-Jae Jang, Sujitra J. Pookpanratana, Alyssa N. Brigeman, Regis J. Kline, James I. Basham, David J. Gundlach, Christina A. Hacker, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual

Non-contact Conductance Measurement of Nanosize Objects using Reasonant Cavity

May 15, 2014
Author(s)
Jan Obrzut, Nathan D. Orloff, Oleg A. Kirillov
A cavity perturbation method is used to determine conductance of small volume nano-carbon materials. These are the building blocks of nanostructured materials and devices, and therefore their electrical characteristics are important in the materials

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

May 28, 2013
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler
We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy

March 6, 2012
Author(s)
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from

Spin transport in memristive devices

January 26, 2012
Author(s)
Hyuk-Jae Jang, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavior

Microwave Characterization of Transparent Conducting Films

May 26, 2011
Author(s)
Jan Obrzut, Oleg A. Kirillov
The high frequency conductivity of thin metallic and graphitic nano-films attracts interest due to many potential applications in spin electronics, electromagnetic shielding, flexible antennas, displays, and solar cells. The surface morphology of thin