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Search Publications by: Oleg Kirillov (Fed)

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Displaying 1 - 25 of 78

Non-contact Surface Conductance Measurement of Graphene using Resonant Cavity

October 10, 2016
Author(s)
Jan Obrzut, Oleg A. Kirillov
The measurement of conductance by a resonant cavity involves monitoring the resonant frequency shift and change in the quality factor before and after insertion of the specimen into the cavity. The method is applicable to carbon Vapor deposited (CVD)

Surface conductance of graphene from non-contact resonant cavity

March 15, 2016
Author(s)
Jan Obrzut, Caglar Dogu Emiroglu, Oleg A. Kirillov, Yanfei Yang, Randolph E. Elmquist
A method is established to reliably determine surface conductance of single-layer or multi-layer atomically thin nano-carbon graphene structures. These can be synthesized by chemical vapor deposition (CVD), epitaxial growth on silicon carbide (SiC)

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

November 24, 2014
Author(s)
Wei Li, Qin Zhang, R. Bijesh, Oleg A. Kirillov, Yiran Liang, Igor Levin, Lianmao Peng, Xuelei Liang, S. Datta, David J. Gundlach, Nhan V. Nguyen
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the

Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

June 26, 2014
Author(s)
Hyuk-Jae Jang, Sujitra J. Pookpanratana, Alyssa N. Brigeman, Regis J. Kline, James I. Basham, David J. Gundlach, Christina A. Hacker, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual

Non-contact Conductance Measurement of Nanosize Objects using Reasonant Cavity

May 15, 2014
Author(s)
Jan Obrzut, Nathan D. Orloff, Oleg A. Kirillov
A cavity perturbation method is used to determine conductance of small volume nano-carbon materials. These are the building blocks of nanostructured materials and devices, and therefore their electrical characteristics are important in the materials

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

May 28, 2013
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler
We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by