Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

Published

Author(s)

Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler

Abstract

We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the other without (uncapped). Both Cu TSVs were found to be in a state of tensile hydrostatic stress that fluctuated considerably with depth. The average hydrostatic stress across the capped and the uncapped Cu TSVs was found to be (99 MPa ± 13 MPa) and (118 MPa ± 18 MPa), respectively. This apparent disparity between the mean hydrostatic stresses is attributed to local differences in their microstructure, and not to the differences in capping.
Proceedings Title
Proceeding of IEEE Electronic Components and Technology Conference (ECTC)
Conference Dates
May 28-31, 2013
Conference Location
Las Vegas, NV

Citation

Okoro, C. , Levine, L. , Kirillov, O. , Obeng, Y. , Xu, R. , Z., J. , Liu, W. and , K. (2013), X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs, Proceeding of IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV (Accessed October 10, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created May 28, 2013, Updated February 19, 2017
Was this page helpful?