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Search Publications by: Ronald L. Jones (Fed)

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Displaying 51 - 74 of 74

3-Dimensional Lineshape Metrology Using Small Angle X-ray Scattering

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, G G. Barclay
The need for sub-nanometer precision metrology of dense patterns for future technology nodes challenges current methods based on light scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). We provide results of initial tests

Fast Evaluation of Next-Generation Lithographical Patterns by Small Angle X-Ray Scattering

September 1, 2003
Author(s)
T Hu, Ronald L. Jones, Wen-Li Wu, Christopher L. Soles, Eric K. Lin, M Arpan, D M. Casa
As the semiconductor industry moves to next-generation lithographies, evaluation of the patterns is more stringent. We demonstrate the capability of small angel X-ray scattering in a fast evaluation of periodicity, size of the patterns, average profile of

Form of Deprotection in Chemically Amplified Resists

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The push to mass production of patterns with sub-100 nm dimensions will require nanometer level control of feature size, including line edge roughness (LER). Control of LER and sidewall roughness within the length scale of individual molecules requires a

NEXAFS Measurements of the Surface Chemistry of Chemically Amplified Photoresists

September 1, 2003
Author(s)
E Jablonski, M Angelopoulos, H Ito, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, S Sambasivan, Daniel A. Fischer, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, K Temple
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy was used to quantify the surface composition profile (top 1 nm to 6 nm) of model chemically amplified photoresists with various photo-acid generators. These materials are prone to interfacial

Polyelectrolyte Effects in Model Photoresist Developer Solutions

August 1, 2003
Author(s)
Vivek M. Prabhu, Ronald L. Jones, Eric K. Lin, Wen-Li Wu
We demonstrate that the industrially relevant deprotected photoresist poly(4-hydroxy styrene) is a polyelectrolyte when dissolved in aqueous base solutions. These findings demonstrate the well-known monomer-monomer correlations indicative of

Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists

June 1, 2003
Author(s)
Ronald L. Jones, C G. Willson, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque
The focus of this paper is the form of spatial heterogeneity of deprotection at the eventual pattern edge. The form results from the packing of fuzzy blobs consisting of volumes of deprotection created by individual photogenerated acids. The form and size

Sub-Nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-Ray Scattering

June 1, 2003
Author(s)
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, Ndubuisi George Orji, Theodore V. Vorburger, P J. Bolton, Z Barclay
The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We provide

Incoherent Neutron Scattering and the Dynamics of Thin Film Photoresist Polymers

February 1, 2003
Author(s)
Christopher L. Soles, Jack F. Douglas, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
Elastic incoherent neutron scattering is employed to parameterize changes in the atomic/molecular mobility in lithographic polymers as a function of film thickness. Changes in the 200 MHz and faster dynamics are estimated in terms of a harmonic oscillator

Polymer Dynamics and Diffusive Properties in Ultra-Thin Photoresist Films

February 1, 2003
Author(s)
Christopher L. Soles, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Vivek M. Prabhu, Wen-Li Wu, Eric K. Lin, D L. Goldfarb, M Angelopoulos
A series of experiments are presented to demonstrate thin film confinement effects on the diffusive properties in poly(tert-butoxycarboxystyrene) (PBOCSt). Bilayer diffusion couple measurements reveal that as the thickness of a PBOCSt film is decreased

X-Ray Absorption Spectroscopy to Probe Interfacial Issues in Photolithography

February 1, 2003
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
Control of the shape, critical dimension (CD), and roughness is critical for the fabrication of sub 100 nm features, where the CD and roughness budget are approaching the molecular dimension of the resist polymers1. Here we utilize near edge X-ray

Chain Conformation in Ultrathin Polymer Films

December 1, 2002
Author(s)
Ronald L. Jones, Christopher Soles, Francis W. Starr, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, D L. Goldfarb, M Angelopolous
Using Small Angle Neutron Scattering (SANS), we present the first quantitative measurements of the 3-dimensional conformation of macromolecules in thin polymer films of D

Measurement of the Spatial Evolution of the Deprotection Reaction Front With Nanometer Resolution Using Neutron Reflectometry

December 1, 2002
Author(s)
Eric K. Lin, Sushil K. Satija, Wen-Li Wu, Christopher L. Soles, D L. Goldfarb, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Willson
The use of chemically amplified photoresists for the fabrication of sub-100 nm features will require spatial control with nanometer level resolution. To reach this goal, a detailed understanding of the complex reaction-diffusion mechanisms at these length

Reaction Front Induced Roughness in Chemically Amplified Photoresists

August 1, 2002
Author(s)
Vivek Prabhu, Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
We have examined, with tapping mode atomic force microscopy(AFM), the effect of post-exposure bake times and developer on surface roughness using model bilayer interfaces of deuterium-labeled poly(tert-butyloxycarbonyloxy styrene) and poly(hydroxystyrene)

Direct Measurement of the Reaction Front in Chemically Amplified Photoresists

July 1, 2002
Author(s)
Eric K. Lin, Sushil K. Satija, Wen-Li Wu, Christopher L. Soles, D L. Goldfarb, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Willson
The continuing drive by the semiconductor industry to fabricate smaller structures with photolithography will soon require dimensional control at length scales, (2 to 5) nm, comparable to the size of the polymeric molecules in the materials used to pattern

Probing Surface and Bulk Chemistry in Resist Films Using Near Edge X-Ray Absorption Fine Structure

May 1, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, Daniel A. Fischer, S Sambasivan, D L. Goldfarb, M Angelopoulos
Control of the shape, critical dimension (CD), and roughness is critical for the fabrication of sub 100 nm features, where the CD and roughness budget are approaching the molecular dimension of the resist polymers. One focus of our research is identifying

Controlling Morphology During Pattern Development in Thin Film Photoresists

February 1, 2002
Author(s)
Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher L. Soles, Wen-Li Wu
We report on attempts to control surface morphology using current lithographic processes critical to the development of both inorganic and organic nano-structures. Bilayers of protected (base insoluble) and deprotected (base soluble) model lithographic

A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension

January 28, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of processing

Confinement Effects on the Spatial Extent of the Reaction Front in Ultrathin Chemically Amplified Photoresists

December 1, 2001
Author(s)
D L. Goldfarb, M Angelopoulos, Eric K. Lin, Ronald L. Jones, Christopher Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu
Sub-100 nm lithography poses strict requirements on photoresist material properties and processing conditions to achieve necessary critical dimension (CD) control of patterned structures. As resist thickness and feature linewidth decrease, fundamental

Thin Film Confinement Effects on the Thermal Properties of Model Photoresist Polymers

December 1, 2001
Author(s)
Christopher L. Soles, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The demand to print increasingly smaller microelectronic device features means that the thickness of the polymer films used in the lithographic processes must decrease. The thickness of these films is rapidly approaching the unperturbed dimensions of the