Fast Evaluation of Next-Generation Lithographical Patterns by Small Angle X-Ray Scattering

Published

September 1, 2003

Author(s)

T Hu, Ronald L. Jones, Wen-Li Wu, Christopher L. Soles, Eric K. Lin, M Arpan, D M. Casa

Abstract

As the semiconductor industry moves to next-generation lithographies, evaluation of the patterns is more stringent. We demonstrate the capability of small angel X-ray scattering in a fast evaluation of periodicity, size of the patterns, average profile of patterns and pattern quality by examining a series of lithographical patterns of different quality. The Debye-Waller factor is introduced to estimate the random deviation of distances between neighboring patterns from its average pitch size. By optimizing the experimental conditions, we differentiate the diffraction peak broadening due to instrumental smearing and irregularities of the samples. The difference of the full width at half maximum of the peaks between qx and qy directions distinguishes between the different line edge roughness in different directions.

Proceedings Title

American Chemical Society, Division of Polymer Chemistry, National Meeting | 26th | 26th ACS National Meeting | American Chemical Society

Volume

44

Issue

No. 2

Conference Dates

September 1, 2003

Conference Title

Polymer Preprints

Pub Type

Conferences

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Keywords

lithographical pattern, small angle x-ray scattering

Citation

Hu, T. , Jones, R. , Wu, W. , Soles, C. , Lin, E. , Arpan, M. and Casa, D. (2003), Fast Evaluation of Next-Generation Lithographical Patterns by Small Angle X-Ray Scattering, American Chemical Society, Division of Polymer Chemistry, National Meeting | 26th | 26th ACS National Meeting | American Chemical Society, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852191 (Accessed October 9, 2024)