Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Polyelectrolyte Effects in Model Photoresist Developer Solutions: Roles of Base Concentration and Added Salts

Published

Author(s)

Vivek M. Prabhu, Ronald L. Jones, Eric K. Lin, Christopher L. Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
Proceedings Title
Proceedings of SPIE
Volume
5039
Conference Dates
February 24-26, 2003
Conference Location
Santa Clara, CA
Conference Title
SPIE Advanced Lithography

Keywords

Copolymers, Electronic Materials, Lithography, Scattering, Solutions, additives, developer, neutron scattering, photoresist, polyelectrolyte, roughness, solvent quality

Citation

Prabhu, V. , Jones, R. , Lin, E. , Soles, C. , Wu, W. , Goldfarb, D. and Angelopoulos, M. (2003), Polyelectrolyte Effects in Model Photoresist Developer Solutions: Roles of Base Concentration and Added Salts, Proceedings of SPIE, Santa Clara, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853867 (Accessed October 10, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created January 1, 2003, Updated February 19, 2017
Was this page helpful?