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Search Publications by: Curt A. Richter (Fed)

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Displaying 26 - 50 of 476

Substrate-mediated hyperbolic phonon polaritons in MoO3

February 15, 2021
Author(s)
Jeffrey Schwartz, Son T. Le, Sergiy Krylyuk, Curt A. Richter, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent charge oscillations that exist in strongly optically anisotropic, two-dimensional materials (e.g., MoO3). These polaritons propagate through the material's volume with long

High-Resolution Biochemical Activity Measurements with Commercial Transistors

September 1, 2020
Author(s)
Seulki Cho, Son T. Le, Curt A. Richter, Arvind Balijepalli
We demonstrate that single-gated, commercially-sourced, field-effect transistors (FETs) operated with a lock- in amplifier (LIA) under closed-loop control can achieve an average pH resolution of 9x10^-4. This performance represents an 8-fold improvement

Electron-electron interactions in low-dimensional Si:P delta layers

June 15, 2020
Author(s)
Joseph Hagmann, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Jonathan Wyrick, Scott W. Schmucker, Michael Stewart, Richard M. Silver, Curt A. Richter
Key to producing quantum computing devices based on the atomistic placement of dopants in silicon by scanning tunneling microscope (STM) lithography is the formation of embedded highly doped Si:P delta layers (δ-layers). This study investigates the

Rapid, quantitative therapeutic screening for Alzheimer's enzymes enabled by optimal signal transduction with transistors

April 14, 2020
Author(s)
Son T. Le, Michelle A. Morris, Antonio Cardone, Nicholas B. Guros, Jeffery B. Klauda, Brent A. Sperling, Curt A. Richter, Harish C. Pant, Arvind Balijepalli
We show that commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed-loop control achieve a resolution of (7.2+/-0.3)x10-3 pH units with a bandwidth of 10 Hz. The results represent an 3-fold improvement in performance

Use of quantum effects as potential qualifying metrics for "quantum grade silicon"

December 30, 2019
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph A. Hagmann, Hyun S. Kim, David S. Simons, Curt A. Richter, Joshua M. Pomeroy
Across solid state quantum information, material deficiencies limit performance through enhanced relaxation, charge defect motion, or isotopic spin noise. While classical measurements of device performance provide cursory guidance, specific qualifying

Nonvolatile memory based on redox-active Ruthenium molecular monolayers

October 14, 2019
Author(s)
Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li
A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x

QUANTUM-LIMITED 2D SENSORS FOR PH AND BIOSENSING

September 27, 2019
Author(s)
Arvind K. Balijepalli, Son T. Le, Harish C. Pant, Curt A. Richter
We have developed biosensors based on dual-gated field-effect transistors (FETs) that operate at the quantum capacitance limit. The FETs are fabricated with atomically thin MoS2 semiconducting films and top-gated with a room temperature ionic-liquid. The

Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements

August 7, 2019
Author(s)
Son T. Le, Nicholas B. Guros, Robert C. Bruce, Antonio Cardone, Niranjana D. Amin, Siyuan Zhang, Jeffery B. Klauda, Harish C. Pant, Curt A. Richter, Arvind Balijepalli
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with 75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature when used as a

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

April 16, 2019
Author(s)
Nicholas B. Guros, Son T. Le, Siyuan Zhang, Brent A. Sperling, Jeffery B. Klauda, Curt A. Richter, Arvind Balijepalli
We have developed an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area 2D MoS2 films with an average yield of 85 %. A central element of the technique is a new exposed film forming gas anneal (EF- FGA) that
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