Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Nonvolatile memory based on redox-active Ruthenium molecular monolayers



Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li


A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x-ray photoelectron spectroscopy. The prototypical capacitor memory devices in this work employed a metal/oxide/molecule/oxide/Si structure. With the intrinsic redox-active charge-storage properties of diruthenium molecules, these capacitor memory devices exhibited fast Program and Erase speed,excellent endurance performance with negligible degradation of the memory window after 105 Program/Erase cycles, and very good 10-year memory retention. These experimental results indicate that the redox-active ruthenium molecular memory is very promising for use in nonvolatile memory applications.
Applied Physics Letters


Nanoelectronics, Molecular Electronics, Molecular Memory, Memory, self-assembly


Jiang, K. , Pookpanratana, S. , Ren, T. , Natoli, S. , Sperling, B. , Robertson, J. , Richter, C. , Yu, S. and Li, Q. (2019), Nonvolatile memory based on redox-active Ruthenium molecular monolayers, Applied Physics Letters, [online], (Accessed June 19, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created October 13, 2019, Updated October 12, 2021