Skip to main content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Nonvolatile memory based on redox-active Ruthenium molecular monolayers

Published

Author(s)

Kai Jiang, Sujitra J. Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li

Abstract

A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click’ reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x-ray photoelectron spectroscopy. The prototypical capacitor memory devices in this work employed a metal/oxide/molecule/oxide/Si structure. With the intrinsic redox-active charge-storage properties of diruthenium molecules, these capacitor memory devices exhibited fast Program and Erase speed,excellent endurance performance with negligible degradation of the memory window after 105 Program/Erase cycles, and very good 10-year memory retention. These experimental results indicate that the redox-active ruthenium molecular memory is very promising for use in nonvolatile memory applications.
Citation
Applied Physics Letters
Volume
115
Issue
16

Keywords

Nanoelectronics, Molecular Electronics, Molecular Memory, Memory, self-assembly
Created October 14, 2019, Updated January 7, 2020