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Nonvolatile memory based on redox-active Ruthenium molecular monolayers

Published

Author(s)

Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li

Abstract

A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x-ray photoelectron spectroscopy. The prototypical capacitor memory devices in this work employed a metal/oxide/molecule/oxide/Si structure. With the intrinsic redox-active charge-storage properties of diruthenium molecules, these capacitor memory devices exhibited fast Program and Erase speed,excellent endurance performance with negligible degradation of the memory window after 105 Program/Erase cycles, and very good 10-year memory retention. These experimental results indicate that the redox-active ruthenium molecular memory is very promising for use in nonvolatile memory applications.
Citation
Applied Physics Letters
Volume
115
Issue
16

Keywords

Nanoelectronics, Molecular Electronics, Molecular Memory, Memory, self-assembly

Citation

Jiang, K. , Pookpanratana, S. , Ren, T. , Natoli, S. , Sperling, B. , Robertson, J. , Richter, C. , Yu, S. and Li, Q. (2019), Nonvolatile memory based on redox-active Ruthenium molecular monolayers, Applied Physics Letters, [online], https://doi.org/10.1063/1.5108675 (Accessed October 10, 2025)

Issues

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Created October 13, 2019, Updated October 12, 2021
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