Nonvolatile memory based on redox-active Ruthenium molecular monolayers

Published

October 14, 2019

Author(s)

Kai Jiang, Sujitra Pookpanratana, Tong Ren, Sean Natoli, Brent A. Sperling, Joseph W. Robertson, Curt A. Richter, Sheng Yu, Qiliang Li

Abstract

A monolayer of diruthenium molecules was self-assembled onto the silicon oxide surface in a semiconductor capacitor structure with a ‘click' reaction for nonvolatile memory applications. The attachment of the active molecular monolayer was verified by x-ray photoelectron spectroscopy. The prototypical capacitor memory devices in this work employed a metal/oxide/molecule/oxide/Si structure. With the intrinsic redox-active charge-storage properties of diruthenium molecules, these capacitor memory devices exhibited fast Program and Erase speed,excellent endurance performance with negligible degradation of the memory window after 105 Program/Erase cycles, and very good 10-year memory retention. These experimental results indicate that the redox-active ruthenium molecular memory is very promising for use in nonvolatile memory applications.

Citation

Applied Physics Letters

Volume

115

Issue

16

Pub Type

Journals

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DOI Link

Keywords

Nanoelectronics, Molecular Electronics, Molecular Memory, Memory, self-assembly

Citation

Jiang, K. , Pookpanratana, S. , Ren, T. , Natoli, S. , Sperling, B. , Robertson, J. , Richter, C. , Yu, S. and Li, Q. (2019), Nonvolatile memory based on redox-active Ruthenium molecular monolayers, Applied Physics Letters, [online], https://doi.org/10.1063/1.5108675 (Accessed October 21, 2025)