Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors

Published

August 14, 2019

Author(s)

Hao Zhu, Curt A. Richter, Sheng Yu, Huixian Ye, Min Zeng, Qiliang Li

Abstract

The Aharonov-Bohm (AB) oscillation is a quantum mechanical phenomenon which reveals the coupling of electromagnetic potentials with the electron wave function, affecting the phase of the wave function. Such quantum interference effect can be demonstrated through the magnetotransport measurement focusing on low-dimensional electronic states. Here, we report the experimental observation of anomalous AB oscillation in an enhanced-mode topological insulator Bi2Se3 nanowire field-effect transistor (FET) under strong surface disorder, which is different from the reported AB oscillation in topological insulator nanostructures. The surrounding-gate of the nanowire FET gives rise to tenability of the chemical potential and introduces the strong disorder on the surface states leading to primary oscillation with anomalous h/e period. Furthermore, the oscillation exhibits a significant dependence on the gate voltage which has been preliminary explained with the quantization of the surface conduction channel. The experimental demonstration can be very attractive for further exploration of quantum phase interference through electrical approaches enabling applications in future information and electromagnetic sensing technology.

Citation

Applied Physics Letters

Volume

115

Issue

7

Pub Type

Journals

Download Paper

DOI Link

Keywords

Topological Insulator, Nanoelectronics, quantum interference, field-effect transistor

Citation

Zhu, H. , Richter, C. , Yu, S. , Ye, H. , Zeng, M. and Li, Q. (2019), Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors, Applied Physics Letters, [online], https://doi.org/10.1063/1.5111180 (Accessed May 5, 2024)