Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Contacts to solution-synthesized SnS nanoribbons: Dependence of barrier height on metal work function

Published

Author(s)

Adam J. Biacchi, Jenifer Hazjus, Curt A. Richter, Angela R. Hight Walker, Lisa Porter

Abstract

Tin (II) monosulfide (SnS) is a layered, anisotropic material that is of interest as a two- dimensional semiconductor for opto-electronic, thermoelectric, and piezoelectric applications. In this study, the effect of work function on contact behavior was investigated. Ni/Au, Pd/Au, Cr/Au, and Ti/Au contacts were fabricated onto individual, solution-synthesized, p-type SnS nanoribbons. The lower work function metals (Cr and Ti) formed Schottky contacts, whereas the higher work function metals (Ni and Pd) formed ohmic or semi-ohmic contacts. Of the ohmic contacts, Ni was found to have a lower contact resistance (~10-4 Ω-cm2 or lower) than Pd (~10-3 Ω-cm2 or lower). Both the calculated Schottky barriers (0.39 and 0.50 eV) for Cr and Ti, respectively, and the ohmic behavior for Ni and Pd agree with behavior predicted by Schottky-Mott theory. The results indicate that high work function metals should be considered to form low resistance contacts to SnS multilayers.
Citation
Nanoscale
Volume
10

Citation

Biacchi, A. , Hazjus, J. , Richter, C. , Hight, A. and Porter, L. (2017), Contacts to solution-synthesized SnS nanoribbons: Dependence of barrier height on metal work function, Nanoscale, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924311 (Accessed April 21, 2024)
Created November 30, 2017, Updated January 4, 2018