Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon

Published

June 29, 2017

Author(s)

Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver, Curt A. Richter

Abstract

The key building block for devices based on the deterministic placement of dopants in silicon is the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed with a scanning tunnel microscope which can pattern device features on a hydrogen-terminated silicon surface by exposing Si dangling bonds at specific locations and implanting phosphorus at these locations with atomic precision. We describe advancements in the dopant formation and overgrowth processes necessary to produce prototypical few-atom devices in a controlled solid-state environment. The structure of the samples is determined from a suite of measurements that includes scanning tunneling microscopy, transmission electron microscopy, secondary ion mass spectrometry, and is directly correlated with the electrical properties as determined by variable-temperature magnetotransport. We examine the effect of delta layer quality on the weak localization (WL) observed in these samples at low temperatures and low magnetic fields. We present parameters extracted from the fit of the WL feature to the Hikami-Larkin-Nagaoka equation that, alongside descriptions of delta- layer quality and dopant diffusion, demonstrate a method of testing these aspects of sample synthesis through electrical transport.

Proceedings Title

59th Electronic Materials Conference

Conference Dates

June 28-30, 2017

Conference Location

Notre Dame, IN

Pub Type

Conferences

Citation

Hagmann, J. , Wang, X. , Namboodiri, P. , Wyrick, J. , Murray, R. , Stewart, M. , Silver, R. and Richter, C. (2017), Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon, 59th Electronic Materials Conference, Notre Dame, IN (Accessed October 14, 2025)