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Epitaxially-grown self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures



Joseph A. Hagmann, Xiang Li, Si-Ning Dong, Sergei Rouvimov, Sujitra J. Pookpanratana, Kin Man Yu, Tatyana Orlova, Curt A. Richter, David G. Seiler, Xinyu Liu, Jacek K. Furdyna, Margaret Dobrowolska


Progress in understanding topologically non-trivial systems offers the promise of predicting novel systems that demonstrate the remarkable properties associated with topological systems, such as unidirectional spin-polarized surface current and the potential to host exotic topological states. We theoretically demonstrate a new topological insulator with in-plane magnetic ordering, Bi2MnSe4, the growth of which arises from the intergrowth of {111} planes of MnSe with Bi2Se3 layers, and present, for the first time, its structural, magnetic, and electronic properties. We propose a method of molecular beam epitaxial growth of this material and present details on the resulting growth of Bi2MnSe4 in a self-assembled layered heterostructure with Bi2Se3 in a near-periodic self-assembled heterostructure formed of layers of Bi2Se3 separated by single-layer Bi2MnSe4 crystals. Corresponding theoretical calculations of the electronic structure of these heterostructures show a disruption of the topological state arising from the strain field at the Bi2Se3-Bi2MnSe4 boundary and a corresponding opening of a gap in the Dirac cone. Our results demonstrate the growth mechanism and physical characteristics of Bi2MnSe4, a novel system with an intriguing combination of topological and magnetic properties.
New Journal of Physics


Topological insulators, 2D materials, magnetism, molecular beam epitaxy, MBE, Bi2Se3, Bi2MnSe4


Hagmann, J. , Li, X. , Dong, S. , Rouvimov, S. , Pookpanratana, S. , , K. , Orlova, T. , Richter, C. , Seiler, D. , Liu, X. , Furdyna, J. and Dobrowolska, M. (2017), Epitaxially-grown self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures, New Journal of Physics (Accessed April 13, 2024)
Created August 14, 2017, Updated May 18, 2018