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Displaying 26 - 50 of 231

A synchrotron beamline for extreme-ultraviolet photoresist testing

September 30, 2011
Author(s)
Charles S. Tarrio, Steven E. Grantham, Shannon B. Hill, Nadir S. Faradzhev, Lee J. Richter, Chester Knurek, Thomas B. Lucatorto
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be evaluated for sensitivity and tested to ensure that they will not contaminate the scanner optics. The new NIST facility described here provides data on the contamination

SURF III: A flexible Synchrotron Radiation Source for Radiometry and Research

September 1, 2011
Author(s)
Uwe Arp, Charles W. Clark, Lu Deng, Nadir S. Faradzhev, Alex P. Farrell, Mitchell L. Furst, Steven E. Grantham, Edward W. Hagley, Shannon B. Hill, Thomas B. Lucatorto, Ping-Shine Shaw, Charles S. Tarrio, Robert E. Vest
The calculability of synchrotron radiation (SR) makes electron storage rings wonderful light sources for radiometry. The broadband nature of SR allows coverage of the whole spectral region from the x-ray to the far-infrared. Compact low-energy storage

The NIST EUV facility for advanced photoresist qualification using the witness-sample test

August 29, 2011
Author(s)
Steven E. Grantham, Charles S. Tarrio, Shannon B. Hill, Lee J. Richter, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff
Before being used in an extreme-ultraviolet (EUV) scanner, photoresists must first be qualified to ensure that they will not excessively contaminate the scanner optics or other parts of the vacuum environment of the scanner. At the National Institute of

Optics contamination studies in support of high-throughput EUV lithography tools

March 25, 2011
Author(s)
Shannon B. Hill, Fardina Asikin, Lee J. Richter, Steven E. Grantham, Charles S. Tarrio, Thomas B. Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of

A Novel Wafer-plane Dosimeter for EUV Lithography

November 1, 2009
Author(s)
Steven E. Grantham, Charles S. Tarrio
Extreme Ultraviolet Lithography (EUVL) incorporates 13.5 nm light for patterning wafers and requires in-situ wafer-plane dosimetry that can be tailored to the requirements of an EUVL stepper’s environment. There are several types of detectors that are

Measuring the EUV-induced contamination rates of TiO2-capped multilayer optics by anticipated production-environment hydrocarbons

October 1, 2009
Author(s)
Shannon B. Hill, Nadir S. Faradzhev, Charles S. Tarrio, Thomas B. Lucatorto, Robert A. Bartynski, B. V. Yakshinskiy, T. E. Madey
The primary, publicly reported cause of optic degradation in pre-production extreme-ultraviolet (EUV) lithography systems is carbon deposition. This results when volatile organics adsorb onto optic surfaces and then are cracked by EUV-induced reactions

Tracking down sources of carbon contamination in EUVL exposure tools

August 3, 2009
Author(s)
Charles S. Tarrio, Robert E. Vest, Thomas B. Lucatorto, R. Caudillo
Optics in EUVL exposure tools are known to suffer reflectivity degradation, mostly from the buildup of carbon. The sources of this carbon have been difficult to identify. Vacuum cleanliness is normally monitored with a residual gas analyzer, but this has

At-Wavelength Metrology for EUV Lithography at NIST

July 14, 2009
Author(s)
Charles S. Tarrio, Steven E. Grantham, Robert E. Vest, Thomas B. Lucatorto
The National Institute of Standards and Technology (NIST) is active in many areas of metrology impacting extreme ultraviolet lithography. We will describe our activities in the areas of reflectometry, pulsed radiometry, and long-term multiplayer mirror

EUVL dosimetry at NIST

March 13, 2009
Author(s)
Charles S. Tarrio, Steven E. Grantham, Marc J. Cangemi, Robert E. Vest, Thomas B. Lucatorto, Noreen Harned
As part of its role in providing radiometric standards in support of industry, NIST has been active in advancing extreme ultraviolet dosimetry on various fronts. Recently, we undertook a major effort in accurately measuring the sensitivity of three extreme

Accelerated Lifetime Metrology of EUV Multilayer Mirrors in Hydrocarbon Environments

October 1, 2008
Author(s)
Shannon B. Hill, Nadir S. Faradzhev, Charles S. Tarrio, Thomas B. Lucatorto, T. E. Madey, B. V. Yakshinskiy, E. Loginova, S. Yulin
The ability to predict the rate of reflectivity loss of capped multilayer mirrors (MLMs) under various conditions of ambient vacuum composition, intensity, and previous dose is crucial to solving the mirror lifetime problem in an EUV stepper. Previous