U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by:

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 148

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

May 10, 2015
Author(s)
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 3.0

October 1, 2014
Author(s)
Chris Greer, David A. Wollman, Dean Prochaska, Paul A. Boynton, Jeffrey A. Mazer, Cuong Nguyen, Gerald FitzPatrick, Thomas L. Nelson, Galen H. Koepke, Allen R. Hefner Jr., Victoria Yan Pillitteri, Tanya L. Brewer, Nada T. Golmie, David H. Su, Allan C. Eustis, David Holmberg, Steven T. Bushby
Section 1305 of the Energy Independence and Security Act (EISA) of 2007 (Pub. L. 110-140) directs NIST ‘‘to coordinate the development of a framework that includes protocols and model standards for information management to achieve interoperability of

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 2.0

February 16, 2012
Author(s)
George W. Arnold, Gerald FitzPatrick, David A. Wollman, Thomas L. Nelson, Paul A. Boynton, Galen H. Koepke, Allen R. Hefner Jr., Cuong Nguyen, Jeffrey A. Mazer, Dean Prochaska, Marianne M. Swanson, Tanya L. Brewer, Victoria Yan Pillitteri, David H. Su, Nada T. Golmie, Eric D. Simmon, Allan C. Eustis, David Holmberg, Steven T. Bushby, Michael D. Janezic, Ajitkumar Jillavenkatesa
The Energy Independence and Security Act (EISA) of 2007 requires that NIST develop a framework of standards for the Smart Grid. This document is the second release of the framework first published in January, 2010. It covers the activities and outputs of

Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications

March 10, 2011
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy
A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both

Computer-Controlled Thermal Cycling Tool to Aid in SiC Module Package Characterization

June 30, 2010
Author(s)
Madelaine H. Hernandez, Jose M. Ortiz, Brian J. Grummel, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Patrick McCluskey
A software-controlled thermal cycling test system developed for SiC module package characterization is presented. Its interface permits the flexible definition of testing parameters like variable data acquisition rates and customizable cycle transitions