Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by:

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 296

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

May 10, 2015
Author(s)
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 3.0

October 1, 2014
Author(s)
Chris Greer, David A. Wollman, Dean Prochaska, Paul A. Boynton, Jeffrey A. Mazer, Cuong Nguyen, Gerald FitzPatrick, Thomas L. Nelson, Galen H. Koepke, Allen R. Hefner Jr., Victoria Yan Pillitteri, Tanya L. Brewer, Nada T. Golmie, David H. Su, Allan C. Eustis, David Holmberg, Steven T. Bushby
Section 1305 of the Energy Independence and Security Act (EISA) of 2007 (Pub. L. 110-140) directs NIST ‘‘to coordinate the development of a framework that includes protocols and model standards for information management to achieve interoperability of

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and

Thermo-Mechanical Characterization of AuIn Transient Liquid Phase Bonding Die-Attach

April 9, 2013
Author(s)
Brian J. Grummel, Habib A. Mustain, Z. J. Shen, Allen R. Hefner Jr.
In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanical

NIST Framework and Roadmap for Smart Grid Interoperability Standards, Release 2.0

February 16, 2012
Author(s)
George W. Arnold, Gerald FitzPatrick, David A. Wollman, Thomas L. Nelson, Paul A. Boynton, Galen H. Koepke, Allen R. Hefner Jr., Cuong Nguyen, Jeffrey A. Mazer, Dean Prochaska, Marianne M. Swanson, Tanya L. Brewer, Victoria Yan Pillitteri, David H. Su, Nada T. Golmie, Eric D. Simmon, Allan C. Eustis, David Holmberg, Steven T. Bushby, Michael D. Janezic, Ajitkumar Jillavenkatesa
The Energy Independence and Security Act (EISA) of 2007 requires that NIST develop a framework of standards for the Smart Grid. This document is the second release of the framework first published in January, 2010. It covers the activities and outputs of